Discrete Semiconductor Products

VS-ETH1506STRL-M3

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DIODE GEN PURP 600V 15A TO263AB

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Discrete Semiconductor Products

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DIODE GEN PURP 600V 15A TO263AB

Technical Specifications

Parameters and characteristics for this part

Specification	VS-ETH1506STRL-M3

Current - Average Rectified (Io)	15 A
Current - Reverse Leakage @ Vr	15 µA
Mounting Type	Surface Mount
Operating Temperature - Junction [Max]	175 ░C
Operating Temperature - Junction [Min]	-65 C
Package / Case	D2PAK (2 Leads + Tab), TO-263AB, TO-263-3
Speed	Standard Recovery >500ns
Speed	200 mA
Supplier Device Package	TO-263AB (D2PAK)
Technology	Standard
Voltage - DC Reverse (Vr) (Max) [Max]	600 V
Voltage - Forward (Vf) (Max) @ If	2.45 V

Part	Current - Average Rectified (Io)	Package / Case	Mounting Type	Voltage - Forward (Vf) (Max) @ If	Operating Temperature - Junction [Max]	Operating Temperature - Junction [Min]	Speed	Speed	Supplier Device Package	Technology	Voltage - DC Reverse (Vr) (Max) [Max]	Current - Reverse Leakage @ Vr	Grade	Qualification
Vishay General Semiconductor - Diodes Division VS-ETH1506STRR-M3	15 A	D2PAK (2 Leads + Tab) TO-263-3 TO-263AB	Surface Mount	2.45 V	175 ░C	-65 C	Standard Recovery >500ns	200 mA	TO-263AB (D2PAK)	Standard	600 V	15 µA
Vishay General Semiconductor - Diodes Division VS-ETH1506STRRHM3	15 A	D2PAK (2 Leads + Tab) TO-263-3 TO-263AB	Surface Mount	2.45 V	175 ░C	-65 C	Standard Recovery >500ns	200 mA	TO-263AB (D2PAK)	Standard	600 V	15 µA	Automotive	AEC-Q101
Vishay General Semiconductor - Diodes Division VS-ETH1506STRL-M3	15 A	D2PAK (2 Leads + Tab) TO-263-3 TO-263AB	Surface Mount	2.45 V	175 ░C	-65 C	Standard Recovery >500ns	200 mA	TO-263AB (D2PAK)	Standard	600 V	15 µA

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General part information

Diode 600 V 15A Surface Mount TO-263AB (D2PAK)

Technical documentation and resources