Discrete Semiconductor Products

BU408 PBFREE

Obsolete

BIPOLAR TRANSISTORS - BJT NPN TRANS 400VCBO 400VCES 200VCEO 60W

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Discrete Semiconductor Products

Obsolete

BIPOLAR TRANSISTORS - BJT NPN TRANS 400VCBO 400VCES 200VCEO 60W

Technical Specifications

Parameters and characteristics for this part

Specification	BU408 PBFREE

Current - Collector (Ic) (Max) [Max]	7 A
Current - Collector Cutoff (Max) [Max]	100 nA
Frequency - Transition	10 MHz
Mounting Type	Through Hole
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-65 °C
Package / Case	TO-220-3
Power - Max [Max]	60 W
Supplier Device Package	TO-220-3
Transistor Type	NPN
Vce Saturation (Max) @ Ib, Ic	1 V
Voltage - Collector Emitter Breakdown (Max) [Max]	200 V

Part	Vce Saturation (Max) @ Ib, Ic	Transistor Type	Current - Collector (Ic) (Max) [Max]	Voltage - Collector Emitter Breakdown (Max) [Max]	Frequency - Transition	Package / Case	Operating Temperature [Max]	Operating Temperature [Min]	Supplier Device Package	Power - Max [Max]	Mounting Type	Current - Collector Cutoff (Max) [Max]
Central Semiconductor Corp BU408 PBFREE	1 V	NPN	7 A	200 V	10 MHz	TO-220-3	150 °C	-65 °C	TO-220-3	60 W	Through Hole	100 nA

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General part information

Bipolar (BJT) Transistor NPN 200 V 7 A 10MHz 60 W Through Hole TO-220-3

Technical documentation and resources