Discrete Semiconductor Products

RN1117(TE85L,F)

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DIGITAL TRANSISTORS 10KOHM 4.7KOHM 0.1A SOT-416 50V

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Discrete Semiconductor Products

Active

DIGITAL TRANSISTORS 10KOHM 4.7KOHM 0.1A SOT-416 50V

Technical Specifications

Parameters and characteristics for this part

Specification	RN1117(TE85L,F)

Current - Collector (Ic) (Max) [Max]	100 mA
Current - Collector Cutoff (Max) [Max]	500 nA
DC Current Gain (hFE) (Min) @ Ic, Vce [Min]	30
Frequency - Transition	250 MHz
Mounting Type	Surface Mount
Package / Case	SOT-416, SC-75
Power - Max [Max]	100 mW
Resistor - Base (R1)	10 kOhms
Resistor - Emitter Base (R2)	4.7 kOhms
Supplier Device Package	SSM
Transistor Type	NPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic	300 mV
Voltage - Collector Emitter Breakdown (Max) [Max]	50 V

Part	Package / Case	Resistor - Base (R1)	Voltage - Collector Emitter Breakdown (Max) [Max]	Power - Max [Max]	Mounting Type	Current - Collector (Ic) (Max) [Max]	Transistor Type	Resistor - Emitter Base (R2)	DC Current Gain (hFE) (Min) @ Ic, Vce [Min]	Current - Collector Cutoff (Max) [Max]	Vce Saturation (Max) @ Ib, Ic	Supplier Device Package	Frequency - Transition
Toshiba Semiconductor and Storage RN1117(T5L,F,T)	SC-75 SOT-416	10 kOhms	50 V	100 mW	Surface Mount	100 mA	NPN - Pre-Biased	4.7 kOhms	30	500 nA	300 mV	SSM	250 MHz
Toshiba Semiconductor and Storage RN1117(TE85L,F)	SC-75 SOT-416	10 kOhms	50 V	100 mW	Surface Mount	100 mA	NPN - Pre-Biased	4.7 kOhms	30	500 nA	300 mV	SSM	250 MHz

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

General part information

Pre-Biased Bipolar Transistor (BJT) NPN - Pre-Biased 50 V 100 mA 250 MHz 100 mW Surface Mount SSM

Technical documentation and resources