PSMN014-60HSX

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MOSFET 2N-CH 60V 30A LFPAK56D

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Discrete Semiconductor Products

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MOSFET 2N-CH 60V 30A LFPAK56D

Technical Specifications

Parameters and characteristics for this part

Specification	PSMN014-60HSX

Configuration	2 N-Channel (Dual)
Current - Continuous Drain (Id) @ 25°C	30 A
Drain to Source Voltage (Vdss)	60 V
Gate Charge (Qg) (Max) @ Vgs	23.6 nC
Input Capacitance (Ciss) (Max) @ Vds	1578 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	175 ░C
Operating Temperature [Min]	-55 °C
Package / Case	8-LFPAK56, SOT-1205
Power - Max [Max]	53 W
Rds On (Max) @ Id, Vgs	14 mOhm
Supplier Device Package	LFPAK56D
Technology	MOSFET (Metal Oxide)

Part	Power - Max [Max]	Rds On (Max) @ Id, Vgs	Gate Charge (Qg) (Max) @ Vgs	Supplier Device Package	Package / Case	Input Capacitance (Ciss) (Max) @ Vds	Current - Continuous Drain (Id) @ 25°C	Configuration	Drain to Source Voltage (Vdss)	Technology	Operating Temperature [Min]	Operating Temperature [Max]	Mounting Type	Vgs(th) (Max) @ Id	FET Feature
Freescale Semiconductor - NXP PSMN014-60HSX	53 W	14 mOhm	23.6 nC	LFPAK56D	8-LFPAK56 SOT-1205	1578 pF	30 A	2 N-Channel (Dual)	60 V	MOSFET (Metal Oxide)	-55 °C	175 ░C	Surface Mount
Freescale Semiconductor - NXP PSMN014-40HLDX	46 W	13.6 mOhm	19.4 nC	LFPAK56D	8-LFPAK56 SOT-1205	1160 pF	42 A	2 N-Channel (Dual)	40 V	MOSFET (Metal Oxide)	-55 °C	175 ░C	Surface Mount	2.2 V	Logic Level Gate

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General part information

Mosfet Array 60V 30A (Ta) 53W (Ta) Surface Mount LFPAK56D

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