Part	Current - Continuous Drain (Id) @ 25°C	Input Capacitance (Ciss) (Max) @ Vds	Power Dissipation (Max)	Package / Case	Technology	Gate Charge (Qg) (Max) @ Vgs	Vgs (Max)	Drive Voltage (Max Rds On, Min Rds On)	Vgs(th) (Max) @ Id	Supplier Device Package	Rds On (Max) @ Id, Vgs	Mounting Type	Drain to Source Voltage (Vdss)	Operating Temperature	FET Type
Renesas Electronics Corporation 2SK3814(0)-Z-E2-AZ	60 A
Renesas Electronics Corporation 2SK3814-Z-E1-AZ	60 A	5450 pF	84 W	DPAK (2 Leads + Tab) SC-63 TO-252-3	MOSFET (Metal Oxide)	95 nC	20 V	4.5 V 10 V	2.5 V	TO-252 (MP-3Z)	8.7 mOhm	Surface Mount	60 V	150 °C	N-Channel
Renesas Electronics Corporation 2SK3814(0)-Z-E1-AZ	60 A

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Digikey	N/A	0	$ 0.00

Description

General part information

The 2SK3814 is N-channel MOS Field Effect Transistor designed for high current switching applications.

Technical documentation and resources