Discrete Semiconductor Products
DMC2710UVT-13
ActiveDiodes Inc
20V COMPLEMENTARY PAIR ENHANCEMENT MODE MOSFET
Deep-Dive with AI
Search across all available documentation for this part.
Discrete Semiconductor Products
DMC2710UVT-13
ActiveDiodes Inc
20V COMPLEMENTARY PAIR ENHANCEMENT MODE MOSFET
Deep-Dive with AI
Technical Specifications
Parameters and characteristics for this part
| Specification | DMC2710UVT-13 |
|---|---|
| Configuration | N and P-Channel Complementary |
| Current - Continuous Drain (Id) @ 25°C | 900 mA |
| Current - Continuous Drain (Id) @ 25°C | 1.2 A |
| Drain to Source Voltage (Vdss) | 20 V |
| Gate Charge (Qg) (Max) @ Vgs | 0.7 nC |
| Gate Charge (Qg) (Max) @ Vgs | 0.6 nC |
| Input Capacitance (Ciss) (Max) @ Vds | 49 pF, 42 pF |
| Mounting Type | Surface Mount |
| Operating Temperature [Max] | 150 °C |
| Operating Temperature [Min] | -55 °C |
| Package / Case | TSOT-23-6, SOT-23-6 Thin |
| Power - Max [Max] | 500 mW |
| Rds On (Max) @ Id, Vgs | 700 mOhm, 400 mOhm |
| Supplier Device Package | TSOT-23-6 |
| Technology | MOSFET (Metal Oxide) |
| Vgs(th) (Max) @ Id | 1 V |
DMC2710UVT Series
20V Complementary Pair Enhancement Mode MOSFET
| Part | Gate Charge (Qg) (Max) @ Vgs | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | Configuration | Rds On (Max) @ Id, Vgs | Drain to Source Voltage (Vdss) | Supplier Device Package | Vgs(th) (Max) @ Id | Current - Continuous Drain (Id) @ 25°C | Current - Continuous Drain (Id) @ 25°C | Power - Max [Max] | Operating Temperature [Min] | Operating Temperature [Max] | Mounting Type | Technology | Package / Case | Current - Continuous Drain (Id) @ 25°C |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
 Diodes Inc | 0.7 nC | 0.6 nC | 42 pF 49 pF | N and P-Channel Complementary | 400 mOhm 700 mOhm | 20 V | SOT-563 | 1 V | 800 mA | 1.1 A | 460 mW | -55 °C | 150 °C | Surface Mount | MOSFET (Metal Oxide) | SOT-563 SOT-666 | |
 Diodes Inc | 0.7 nC | 0.6 nC | 42 pF 49 pF | N and P-Channel Complementary | 450 mOhm 750 mOhm | 20 V | SOT-363 | 1 V | 600 mA | 750 mA | 290 mW | -55 °C | 150 °C | Surface Mount | MOSFET (Metal Oxide) | 6-TSSOP SC-88 SOT-363 | |
Diodes Inc | 0.7 nC | 0.6 nC | 42 pF 49 pF | N and P-Channel Complementary | 400 mOhm 700 mOhm | 20 V | TSOT-23-6 | 1 V | 1.2 A | 500 mW | -55 °C | 150 °C | Surface Mount | MOSFET (Metal Oxide) | SOT-23-6 Thin TSOT-23-6 | 900 mA | |
Diodes Inc | 0.7 nC | 0.6 nC | 42 pF 49 pF | N and P-Channel Complementary | 400 mOhm 700 mOhm | 20 V | SOT-563 | 1 V | 800 mA | 1.1 A | 460 mW | -55 °C | 150 °C | Surface Mount | MOSFET (Metal Oxide) | SOT-563 SOT-666 |
Pricing
Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly
| Distributor | Package | Quantity | $ | |
|---|---|---|---|---|
| Digikey | Tape & Reel (TR) | 10000 | $ 0.09 | |
| 20000 | $ 0.08 | |||
| 30000 | $ 0.08 | |||
| 50000 | $ 0.07 | |||
| 70000 | $ 0.07 | |||
Description
General part information
DMC2710UVT Series
This new generation MOSFET is designed to minimize the on-state resistance (RDS(ON)) and yet maintain superior switching performance, making it ideal for high-efficiency power management applications.
Documents
Technical documentation and resources