Discrete Semiconductor Products
2N5655G
ObsoleteON Semiconductor
HIGH VOLTAGE NPN BIPOLAR POWER TRANSISTOR
Discrete Semiconductor Products
2N5655G
ObsoleteON Semiconductor
HIGH VOLTAGE NPN BIPOLAR POWER TRANSISTOR
Technical Specifications
Parameters and characteristics for this part
| Specification | 2N5655G |
|---|---|
| Current - Collector (Ic) (Max) [Max] | 500 mA |
| Current - Collector Cutoff (Max) [Max] | 100 µA |
| DC Current Gain (hFE) (Min) @ Ic, Vce [Min] | 30 |
| Frequency - Transition | 10 MHz |
| Mounting Type | Through Hole |
| Operating Temperature [Max] | 150 °C |
| Operating Temperature [Min] | -65 °C |
| Package / Case | TO-225AA, TO-126-3 |
| Power - Max [Max] | 20 W |
| Supplier Device Package | TO-126 |
| Transistor Type | NPN |
| Voltage - Collector Emitter Breakdown (Max) | 250 V |
Pricing
Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly
| Distributor | Package | Quantity | $ | |
|---|---|---|---|---|
Description
General part information
2N5655 Series
These devices are designed for use in line-operated equipment such as audio output amplifiers; low-current, high-voltage converters; and AC line relays.
Documents
Technical documentation and resources