SIA923EDJ-T4-GE3

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MOSFET 2P-CH 20V 4.5A SC70-6

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Discrete Semiconductor Products

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MOSFET 2P-CH 20V 4.5A SC70-6

Technical Specifications

Parameters and characteristics for this part

Specification	SIA923EDJ-T4-GE3

Configuration	2 P-Channel
Current - Continuous Drain (Id) @ 25°C	4.5 A, 4.5 A
Drain to Source Voltage (Vdss)	20 V
Gate Charge (Qg) (Max) @ Vgs	25 nC
Mounting Type	Surface Mount
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	PowerPAK® SC-70-6 Dual
Rds On (Max) @ Id, Vgs	54 mOhm
Supplier Device Package	PowerPAK® SC-70-6 Dual
Technology	MOSFET (Metal Oxide)
Vgs(th) (Max) @ Id	1.4 V

Part	Gate Charge (Qg) (Max) @ Vgs	Supplier Device Package	Power - Max [Max]	Vgs(th) (Max) @ Id	Technology	Drain to Source Voltage (Vdss)	Operating Temperature [Min]	Operating Temperature [Max]	Mounting Type	Current - Continuous Drain (Id) @ 25°C	Package / Case	FET Feature	Configuration	Rds On (Max) @ Id, Vgs
Vishay General Semiconductor - Diodes Division SIA923EDJ-T1-GE3	25 nC	PowerPAK® SC-70-6 Dual	7.8 W	1.4 V	MOSFET (Metal Oxide)	20 V	-55 °C	150 °C	Surface Mount	4.5 A	PowerPAK® SC-70-6 Dual	Logic Level Gate	2 P-Channel	54 mOhm
Vishay General Semiconductor - Diodes Division SIA923EDJ-T4-GE3	25 nC	PowerPAK® SC-70-6 Dual		1.4 V	MOSFET (Metal Oxide)	20 V	-55 °C	150 °C	Surface Mount	4.5 A 4.5 A	PowerPAK® SC-70-6 Dual		2 P-Channel	54 mOhm

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General part information

Mosfet Array 20V 4.5A (Ta), 4.5A (Tc) 1.9W (Ta), 7.8W (Tc) Surface Mount PowerPAK® SC-70-6 Dual

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