Discrete Semiconductor Products

SQS164ELNW-T1_GE3

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AUTOMOTIVE N-CHANNEL 60 V (D-S)

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Discrete Semiconductor Products

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AUTOMOTIVE N-CHANNEL 60 V (D-S)

Technical Specifications

Parameters and characteristics for this part

Specification	SQS164ELNW-T1_GE3

Current - Continuous Drain (Id) @ 25°C	82 A
Drain to Source Voltage (Vdss)	60 V
Drive Voltage (Max Rds On, Min Rds On)	10 V, 4.5 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]	41 nC
Grade	Automotive
Input Capacitance (Ciss) (Max) @ Vds	2159 pF
Mounting Type	Wettable Flank, Surface Mount
Operating Temperature [Max]	175 ░C
Operating Temperature [Min]	-55 °C
Package / Case	PowerPAK® 1212-8SLW
Power Dissipation (Max)	104 W
Qualification	AEC-Q101
Rds On (Max) @ Id, Vgs	7.4 mOhm
Supplier Device Package	PowerPAK® 1212-8SLW
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max) @ Id	2.5 V

Part	Drive Voltage (Max Rds On, Min Rds On)	Operating Temperature [Min]	Operating Temperature [Max]	Technology	Power Dissipation (Max)	Gate Charge (Qg) (Max) @ Vgs [Max]	Vgs(th) (Max) @ Id	FET Type	Supplier Device Package	Current - Continuous Drain (Id) @ 25°C	Input Capacitance (Ciss) (Max) @ Vds	Grade	Qualification	Vgs (Max)	Mounting Type	Drain to Source Voltage (Vdss)	Rds On (Max) @ Id, Vgs	Package / Case
Vishay General Semiconductor - Diodes Division SQS164ELNW-T1_GE3	4.5 V 10 V	-55 °C	175 ░C	MOSFET (Metal Oxide)	104 W	41 nC	2.5 V	N-Channel	PowerPAK® 1212-8SLW	82 A	2159 pF	Automotive	AEC-Q101	20 V	Surface Mount Wettable Flank	60 V	7.4 mOhm	PowerPAK® 1212-8SLW

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

General part information

N-Channel 60 V 82A (Tc) 104W (Tc) Surface Mount, Wettable Flank PowerPAK® 1212-8SLW

Technical documentation and resources