Littelfuse Power Semi TO-247 3 H 2Sq 1W2N 3L image

Discrete Semiconductor Products

IXTH30N50L2

Active

Littelfuse/Commercial Vehicle Products

TRANS MOSFET N-CH 500V 30A 3-PIN(3+TAB) TO-247AD

Deep-Dive with AI

Search across all available documentation for this part.

DocumentsDatasheet

Discrete Semiconductor Products

IXTH30N50L2

Active

Littelfuse/Commercial Vehicle Products

TRANS MOSFET N-CH 500V 30A 3-PIN(3+TAB) TO-247AD

Deep-Dive with AI

DocumentsDatasheet

Specifications Series Pricing Description Documents

Technical Specifications

Parameters and characteristics for this part

Specification	IXTH30N50L2

Current - Continuous Drain (Id) @ 25°C	30 A
Drain to Source Voltage (Vdss)	500 V
Drive Voltage (Max Rds On, Min Rds On)	10 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]	240 nC
Input Capacitance (Ciss) (Max) @ Vds	8100 pF
Mounting Type	Through Hole
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	TO-247-3
Power Dissipation (Max) [Max]	400 W
Rds On (Max) @ Id, Vgs	200 mOhm
Supplier Device Package	TO-247 (IXTH)
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max) @ Id	4.5 V

IXTH30N50L2 Series

Disc Mosfet N-CH Std-Polar TO-247AD

Part	Current - Continuous Drain (Id) @ 25°C	Technology	Mounting Type	Package / Case	Vgs (Max)	Drive Voltage (Max Rds On, Min Rds On)	Input Capacitance (Ciss) (Max) @ Vds	Vgs(th) (Max) @ Id	FET Type	Supplier Device Package	Rds On (Max) @ Id, Vgs	Drain to Source Voltage (Vdss)	Power Dissipation (Max) [Max]	Operating Temperature [Min]	Operating Temperature [Max]	Gate Charge (Qg) (Max) @ Vgs [Max]	Power Dissipation (Max)
Littelfuse/Commercial Vehicle Products IXTH30N60P	30 A	MOSFET (Metal Oxide)	Through Hole	TO-247-3	30 V	10 V	5050 pF	5 V	N-Channel	TO-247 (IXTH)	240 mOhm	600 V	540 W	-55 °C	150 °C	82 nC
Littelfuse/Commercial Vehicle Products IXTH30N50P	30 A	MOSFET (Metal Oxide)	Through Hole	TO-247-3	30 V	10 V		5 V	N-Channel	TO-247 (IXTH)	200 mOhm	500 V		-55 °C	150 °C	70 nC	460 W
Littelfuse/Commercial Vehicle Products IXTH30N50L2	30 A	MOSFET (Metal Oxide)	Through Hole	TO-247-3	20 V	10 V	8100 pF	4.5 V	N-Channel	TO-247 (IXTH)	200 mOhm	500 V	400 W	-55 °C	150 °C	240 nC

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Digikey	Tube	1	$ 30.94
		30	$ 25.65
		120	$ 24.05

Description

General part information

IXTH30N50L2 Series

Tailored specifically for applications requiring Power MOSFETs to operate in their current saturation regions, these unique devices feature low thermal resistances, high power density, and extended Forward Bias Safe Operating Areas (FBSOA). When Power MOSFETs are utilized in linear-mode operation, as opposed to their conventional switch-mode one, they are required to endure substantially high thermal and electrical stresses due to the simultaneous occurrence of high drain voltages and currents; these extreme stresses can cause typical devices to fail. Littelfuse LinearL2™ Power MOSFETs have been designed to address these kinds of device failures – the FBSOAs are "extended" when the positive feedback of electro-thermal instability is suppressed, giving rise to larger "operating windows." The FBSOAs are guaranteed at 75°C.

Documents

Technical documentation and resources