Discrete Semiconductor Products

CTLSH1-40M563 BK

Obsolete

DIODE SCHOTTKY 40V 1A TLM563

Search across all available documentation for this part.

Discrete Semiconductor Products

Obsolete

DIODE SCHOTTKY 40V 1A TLM563

Technical Specifications

Parameters and characteristics for this part

Specification	CTLSH1-40M563 BK

Capacitance @ Vr, F	50 pF
Current - Average Rectified (Io)	1 A
Current - Reverse Leakage @ Vr	200 µA
Mounting Type	Surface Mount
Operating Temperature - Junction [Max]	150 °C
Operating Temperature - Junction [Min]	-65 C
Package / Case	6-XFDFN Exposed Pad
Reverse Recovery Time (trr)	15 ns
Speed	500 ns, 200 mA
Supplier Device Package	TLM563
Technology	Schottky
Voltage - DC Reverse (Vr) (Max) [Max]	40 V
Voltage - Forward (Vf) (Max) @ If	550 mV

Part	Package / Case	Technology	Voltage - Forward (Vf) (Max) @ If	Current - Reverse Leakage @ Vr	Voltage - DC Reverse (Vr) (Max) [Max]	Capacitance @ Vr, F	Current - Average Rectified (Io)	Mounting Type	Speed	Supplier Device Package	Operating Temperature - Junction [Max]	Operating Temperature - Junction [Min]	Reverse Recovery Time (trr)
Central Semiconductor Corp CTLSH1-50M832DS BK	8-TDFN Exposed Pad	Schottky	550 mV	500 µA	50 V	50 pF	1 A	Surface Mount	200 mA 500 ns	TLM832DS	150 °C	-65 C
Central Semiconductor Corp CTLSH1-40M563 BK	6-XFDFN Exposed Pad	Schottky	550 mV	200 µA	40 V	50 pF	1 A	Surface Mount	200 mA 500 ns	TLM563	150 °C	-65 C	15 ns
Central Semiconductor Corp CTLSH1-40M832DS TR	8-TDFN Exposed Pad	Schottky	550 mV	200 µA	40 V	50 pF	1 A	Surface Mount	200 mA 500 ns	TLM832DS	150 °C	-65 C
Central Semiconductor Corp CTLSH1-50M832DS TR	8-TDFN Exposed Pad	Schottky	550 mV	500 µA	50 V	50 pF	1 A	Surface Mount	200 mA 500 ns	TLM832DS	150 °C	-65 C

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Digikey	N/A	0	$ 0.00

General part information

Diode 40 V 1A Surface Mount TLM563

Technical documentation and resources