Discrete Semiconductor Products

MCAC60P06-TP

Obsolete

MOSFET P-CH 60V 60A DFN5060

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Discrete Semiconductor Products

Obsolete

MOSFET P-CH 60V 60A DFN5060

Technical Specifications

Parameters and characteristics for this part

Specification	MCAC60P06-TP

Current - Continuous Drain (Id) @ 25°C	60 A
Drain to Source Voltage (Vdss)	60 V
Drive Voltage (Max Rds On, Min Rds On)	10 V
FET Type	P-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]	75 nC
Input Capacitance (Ciss) (Max) @ Vds	5814 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	175 ░C
Operating Temperature [Min]	-55 °C
Package / Case	8-PowerTDFN
Power Dissipation (Max) [Max]	130 W
Rds On (Max) @ Id, Vgs [Max]	18 mOhm
Supplier Device Package	DFN5060
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max) @ Id	3.5 V

Part	Supplier Device Package	FET Type	Operating Temperature [Min]	Operating Temperature [Max]	Drive Voltage (Max Rds On, Min Rds On)	Package / Case	Input Capacitance (Ciss) (Max) @ Vds	Technology	Current - Continuous Drain (Id) @ 25°C	Mounting Type	Gate Charge (Qg) (Max) @ Vgs [Max]	Drain to Source Voltage (Vdss)	Vgs(th) (Max) @ Id	Rds On (Max) @ Id, Vgs	Vgs (Max)	Rds On (Max) @ Id, Vgs [Max]	Power Dissipation (Max) [Max]
Micro Commercial Components MCAC60N15YA-TP	DFN5060	N-Channel	-55 °C	150 °C	6 V 10 V	8-PowerTDFN	2100 pF	MOSFET (Metal Oxide)	60 A	Surface Mount	25 nC	150 V	4 V	19 mOhm	25 V
Micro Commercial Components MCAC60P06-TP	DFN5060	P-Channel	-55 °C	175 ░C	10 V	8-PowerTDFN	5814 pF	MOSFET (Metal Oxide)	60 A	Surface Mount	75 nC	60 V	3.5 V		20 V	18 mOhm	130 W

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

General part information

P-Channel 60 V 60A (Tc) 130W Surface Mount DFN5060

Technical documentation and resources