Discrete Semiconductor Products

SI7356ADP-T1-GE3

Obsolete

MOSFET N-CH 30V 40A PPAK SO-8

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Discrete Semiconductor Products

Obsolete

MOSFET N-CH 30V 40A PPAK SO-8

Technical Specifications

Parameters and characteristics for this part

Specification	SI7356ADP-T1-GE3

Current - Continuous Drain (Id) (Tc)	40 A
Drain to Source Voltage (Vdss)	30 V
Drive Voltage (Max Rds On)	4.5 V
Drive Voltage (Min Rds On)	10 V
FET Type	N-Channel
Gate Charge (Max)	145 nC
Input Capacitance (Ciss) (Max)	6215 pF
Mounting Type	Surface Mount
Operating Temperature (Max)	150 °C
Operating Temperature (Min)	-55 °C
Package / Case	PowerPAK® SO-8
Package Name	PowerPAK® SO-8
Power Dissipation (Max)	5.4 W, 83 W
Rds On (Max)	3 mOhm
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max)	3 V

Part	FET Type	Current - Continuous Drain (Id) (Tc)	Input Capacitance (Ciss) (Max)	Package Name	Drain to Source Voltage (Vdss)	Gate Charge (Max)	Operating Temperature (Min)	Operating Temperature (Max)	Drive Voltage (Min Rds On)	Drive Voltage (Max Rds On)	Vgs (Max)	Rds On (Max)	Power Dissipation (Max)	Technology	Mounting Type	Package / Case	Vgs(th) (Max)
Vishay Dale SI7356ADP-T1-GE3	N-Channel	40 A	6215 pF	PowerPAK® SO-8	30 V	145 nC	-55 °C	150 °C	10 V	4.5 V	20 V	3 mOhm	5.4 W 83 W	MOSFET (Metal Oxide)	Surface Mount	PowerPAK® SO-8	3 V

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$	Updated

Digikey	N/A	0	$ 0.00	30d+

3D models and CAD resources for this part

General part information

N-Channel 30 V 40A (Tc) 5.4W (Ta), 83W (Tc) Surface Mount PowerPAK® SO-8

Technical documentation and resources