Discrete Semiconductor Products

AOTF266L

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MOSFET N-CH 60V 18A/78A TO220-3F

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Discrete Semiconductor Products

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MOSFET N-CH 60V 18A/78A TO220-3F

Technical Specifications

Parameters and characteristics for this part

Specification	AOTF266L

Current - Continuous Drain (Id) @ 25°C	18 A, 78 A
Drain to Source Voltage (Vdss)	60 V
Drive Voltage (Max Rds On, Min Rds On)	10 V, 6 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	90 nC
Input Capacitance (Ciss) (Max) @ Vds	5650 pF
Mounting Type	Through Hole
Operating Temperature [Max]	175 °C
Operating Temperature [Min]	-55 °C
Package / Case	TO-220-3 Full Pack
Power Dissipation (Max)	45.5 W
Power Dissipation (Max)	2.1 W
Rds On (Max) @ Id, Vgs	3.5 mOhm
Supplier Device Package	TO-220F
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max) @ Id	3.2 V

Part	FET Type	Current - Continuous Drain (Id) @ 25°C	Mounting Type	Drain to Source Voltage (Vdss)	Vgs (Max)	Power Dissipation (Max)	Power Dissipation (Max)	Operating Temperature [Max]	Operating Temperature [Min]	Rds On (Max) @ Id, Vgs	Supplier Device Package	Technology	Vgs(th) (Max) @ Id	Gate Charge (Qg) (Max) @ Vgs	Input Capacitance (Ciss) (Max) @ Vds	Package / Case	Drive Voltage (Max Rds On, Min Rds On)
Alpha & Omega Semiconductor Inc. AOTF266L	N-Channel	18 A 78 A	Through Hole	60 V	20 V	45.5 W	2.1 W	175 °C	-55 °C	3.5 mOhm	TO-220F	MOSFET (Metal Oxide)	3.2 V	90 nC	5650 pF	TO-220-3 Full Pack	6 V 10 V

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