Discrete Semiconductor Products

BUK7613-60E,118

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MOSFET N-CH 60V 58A D2PAK

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Discrete Semiconductor Products

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MOSFET N-CH 60V 58A D2PAK

Technical Specifications

Parameters and characteristics for this part

Specification	BUK7613-60E,118

Current - Continuous Drain (Id) @ 25°C	58 A
Drain to Source Voltage (Vdss)	60 V
Drive Voltage (Max Rds On, Min Rds On)	10 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]	22.9 nC
Grade	Automotive
Mounting Type	Surface Mount
Operating Temperature [Max]	175 ░C
Operating Temperature [Min]	-55 °C
Package / Case	D2PAK (2 Leads + Tab), TO-263AB, TO-263-3
Power Dissipation (Max)	96 W
Qualification	AEC-Q101
Rds On (Max) @ Id, Vgs	13 mOhm
Supplier Device Package	D2PAK
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V

Part	FET Type	Rds On (Max) @ Id, Vgs	Qualification	Power Dissipation (Max) [Max]	Gate Charge (Qg) (Max) @ Vgs	Technology	Operating Temperature [Min]	Operating Temperature [Max]	Grade	Input Capacitance (Ciss) (Max) @ Vds	Package / Case	Supplier Device Package	Current - Continuous Drain (Id) @ 25°C	Drive Voltage (Max Rds On, Min Rds On)	Drain to Source Voltage (Vdss)	Vgs (Max)	Mounting Type	Gate Charge (Qg) (Max) @ Vgs [Max]	Power Dissipation (Max)
Freescale Semiconductor - NXP BUK7613-100E,118	N-Channel	13 mOhm	AEC-Q101	182 W	97.2 nC	MOSFET (Metal Oxide)	-55 °C	175 ░C	Automotive	4533 pF	D2PAK (2 Leads + Tab) TO-263-3 TO-263AB	D2PAK	72 A	10 V	100 V	20 V	Surface Mount
Freescale Semiconductor - NXP BUK7613-60E,118	N-Channel	13 mOhm	AEC-Q101			MOSFET (Metal Oxide)	-55 °C	175 ░C	Automotive		D2PAK (2 Leads + Tab) TO-263-3 TO-263AB	D2PAK	58 A	10 V	60 V	20 V	Surface Mount	22.9 nC	96 W

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

General part information

N-Channel 60 V 58A (Tc) 96W (Tc) Surface Mount D2PAK

Technical documentation and resources