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3-HUSON
Discrete Semiconductor Products

PBSS5560PA,115

Active
Nexperia USA Inc.

BIPOLAR TRANSISTORS - BJT 80 V, 4 A PNP LOW VCESAT (BISS) TRANSISTOR

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Search across all available documentation for this part.

DocumentsPBSS5560PA,115 Datasheet (PDF)Questions about package outline drawings+9
3-HUSON
Discrete Semiconductor Products

PBSS5560PA,115

Active
Nexperia USA Inc.

BIPOLAR TRANSISTORS - BJT 80 V, 4 A PNP LOW VCESAT (BISS) TRANSISTOR

Deep-Dive with AI

DocumentsPBSS5560PA,115 Datasheet (PDF)Questions about package outline drawings+9

Technical Specifications

Parameters and characteristics for this part

SpecificationPBSS5560PA,115
Current - Collector (Ic) (Max) [Max]5 A
Current - Collector Cutoff (Max) [Max]100 nA
DC Current Gain (hFE) (Min) @ Ic, Vce [Min]150
Frequency - Transition90 MHz
Mounting TypeSurface Mount
Operating Temperature150 °C
Package / Case3-PowerUDFN
Power - Max [Max]2.1 W
Supplier Device Package3-HUSON
Supplier Device Package [x]2
Supplier Device Package [y]2
Transistor TypePNP
Vce Saturation (Max) @ Ib, Ic450 mV
Voltage - Collector Emitter Breakdown (Max) [Max]60 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

DistributorPackageQuantity$
DigikeyCut Tape (CT) 1$ 0.46
10$ 0.39
100$ 0.27
500$ 0.21
1000$ 0.17
Digi-Reel® 1$ 0.46
10$ 0.39
100$ 0.27
500$ 0.21
1000$ 0.17
N/A 1291$ 0.94
Tape & Reel (TR) 3000$ 0.16
6000$ 0.15
9000$ 0.14
30000$ 0.13
MouserN/A 1$ 0.57
10$ 0.39
100$ 0.28
500$ 0.22
1000$ 0.19
3000$ 0.17

Description

General part information

PBSS5560 Series

PNP low VCEsatBreakthrough In Small Signal (BISS) transistor, encapsulated in an ultra thin SOT1061 leadless small Surface-Mounted Device (SMD) plastic package with medium power capability.