Discrete Semiconductor Products

US1A-M3/5AT

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DIODE GEN PURP 50V 1A DO214AC

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Discrete Semiconductor Products

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DIODE GEN PURP 50V 1A DO214AC

Technical Specifications

Parameters and characteristics for this part

Specification	US1A-M3/5AT

Current - Average Rectified (Io)	1 A
Current - Reverse Leakage @ Vr	10 µA
Mounting Type	Surface Mount
Operating Temperature - Junction [Max]	150 °C
Operating Temperature - Junction [Min]	-55 °C
Package / Case	DO-214AC, SMA
Speed	200 mA, 500 ns
Supplier Device Package	DO-214AC (SMA)
Technology	Standard
Voltage - DC Reverse (Vr) (Max) [Max]	50 V
Voltage - Forward (Vf) (Max) @ If	1 V

Part	Current - Average Rectified (Io)	Current - Reverse Leakage @ Vr	Capacitance @ Vr, F	Reverse Recovery Time (trr)	Voltage - Forward (Vf) (Max) @ If	Mounting Type	Operating Temperature - Junction [Max]	Operating Temperature - Junction [Min]	Package / Case	Speed	Voltage - DC Reverse (Vr) (Max) [Max]	Technology	Supplier Device Package
Vishay General Semiconductor - Diodes Division US1A-E3/5AT	1 A	10 µA	15 pF	50 ns	1 V	Surface Mount	150 °C	-55 °C	DO-214AC SMA	200 mA 500 ns	50 V	Standard	DO-214AC (SMA)
Vishay General Semiconductor - Diodes Division US1A-M3/5AT	1 A	10 µA			1 V	Surface Mount	150 °C	-55 °C	DO-214AC SMA	200 mA 500 ns	50 V	Standard	DO-214AC (SMA)
Vishay General Semiconductor - Diodes Division US1A-E3/61T	1 A	10 µA	15 pF	50 ns	1 V	Surface Mount	150 °C	-55 °C	DO-214AC SMA	200 mA 500 ns	50 V	Standard	DO-214AC (SMA)

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General part information

Diode 50 V 1A Surface Mount DO-214AC (SMA)

Technical documentation and resources