Discrete Semiconductor Products

2SB1205S-E

Obsolete

TRANS PNP 20V 5A TP

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Discrete Semiconductor Products

Obsolete

TRANS PNP 20V 5A TP

Technical Specifications

Parameters and characteristics for this part

Specification	2SB1205S-E

Current - Collector (Ic) (Max)	5 A
Current - Collector Cutoff (Max) [Max]	500 nA
DC Current Gain (hFE) (Min) @ Ic, Vce [Min]	140
Frequency - Transition	320 MHz
Mounting Type	Through Hole
Operating Temperature	150 °C
Package / Case	IPAK, TO-251-3 Short Leads, TO-251AA
Power - Max [Max]	1 W
Supplier Device Package	TP
Transistor Type	PNP
Vce Saturation (Max) @ Ib, Ic	500 mV
Voltage - Collector Emitter Breakdown (Max)	20 V

Part	Transistor Type	Power - Max [Max]	Supplier Device Package	Voltage - Collector Emitter Breakdown (Max)	Package / Case	Vce Saturation (Max) @ Ib, Ic	Mounting Type	Operating Temperature	Current - Collector Cutoff (Max) [Max]	Frequency - Transition	Current - Collector (Ic) (Max)	DC Current Gain (hFE) (Min) @ Ic, Vce [Min]
ON Semiconductor 2SB1205S-TL-E	PNP	1 W	TP-FA	20 V	DPAK (2 Leads + Tab) SC-63 TO-252-3	500 mV	Surface Mount	150 °C	500 nA	320 MHz	5 A	140
ON Semiconductor 2SB1205S-E	PNP	1 W	TP	20 V	IPAK TO-251-3 Short Leads TO-251AA	500 mV	Through Hole	150 °C	500 nA	320 MHz	5 A	140

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

General part information

Bipolar (BJT) Transistor PNP 20 V 5 A 320MHz 1 W Through Hole TP

Technical documentation and resources