Discrete Semiconductor Products

NTD6416ANL-1G

Obsolete

SINGLE N-CHANNEL LOGIC LEVEL POWER MOSFET 100V, 19A, 74MΩ

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Discrete Semiconductor Products

Obsolete

SINGLE N-CHANNEL LOGIC LEVEL POWER MOSFET 100V, 19A, 74MΩ

Technical Specifications

Parameters and characteristics for this part

Specification	NTD6416ANL-1G

Current - Continuous Drain (Id) @ 25°C	19 A
Drain to Source Voltage (Vdss)	100 V
Drive Voltage (Max Rds On, Min Rds On)	10 V, 4.5 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]	40 nC
Input Capacitance (Ciss) (Max) @ Vds	1000 pF
Mounting Type	Through Hole
Operating Temperature [Max]	175 ░C
Operating Temperature [Min]	-55 °C
Package / Case	IPAK, TO-251-3 Short Leads, TO-251AA
Power Dissipation (Max)	71 W
Rds On (Max) @ Id, Vgs	74 mOhm
Supplier Device Package	IPAK
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max) @ Id [Max]	2.2 V

Single N-Channel Logic Level Power MOSFET 100V, 19A, 74mΩ

Part	Mounting Type	Gate Charge (Qg) (Max) @ Vgs [Max]	Operating Temperature [Min]	Operating Temperature [Max]	Vgs(th) (Max) @ Id [Max]	Technology	Current - Continuous Drain (Id) @ 25°C	Package / Case	Power Dissipation (Max)	Drain to Source Voltage (Vdss)	Drive Voltage (Max Rds On, Min Rds On)	Input Capacitance (Ciss) (Max) @ Vds	Rds On (Max) @ Id, Vgs	FET Type	Supplier Device Package	Vgs (Max)
ON Semiconductor NTD6416ANL-1G	Through Hole	40 nC	-55 °C	175 ░C	2.2 V	MOSFET (Metal Oxide)	19 A	IPAK TO-251-3 Short Leads TO-251AA	71 W	100 V	4.5 V 10 V	1000 pF	74 mOhm	N-Channel	IPAK	20 V

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

General part information

Power MOSFET 100V 19A 74 mOhm Single N-Channel DPAK Logic Level

Technical documentation and resources