Discrete Semiconductor Products

CDBJSC8650-G

Obsolete

DIODE SIL CARB 650V 8A TO220-2

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Discrete Semiconductor Products

Obsolete

DIODE SIL CARB 650V 8A TO220-2

Technical Specifications

Parameters and characteristics for this part

Specification	CDBJSC8650-G

Current - Average Rectified (Io)	8 A
Current - Reverse Leakage @ Vr	100 µA
Mounting Type	Through Hole
Operating Temperature - Junction [Max]	175 ░C
Operating Temperature - Junction [Min]	-55 °C
Package / Case	TO-220-2
Reverse Recovery Time (trr)	0 ns
Speed	500 mA
Supplier Device Package	TO-220-2
Technology	SiC (Silicon Carbide) Schottky
Voltage - DC Reverse (Vr) (Max) [Max]	650 V
Voltage - Forward (Vf) (Max) @ If	1.7 V

Part	Speed	Technology	Current - Reverse Leakage @ Vr	Supplier Device Package	Package / Case	Voltage - DC Reverse (Vr) (Max) [Max]	Current - Average Rectified (Io)	Mounting Type	Voltage - Forward (Vf) (Max) @ If	Operating Temperature - Junction [Max]	Operating Temperature - Junction [Min]	Reverse Recovery Time (trr)
Comchip Technology CDBJSC8650-G	500 mA	SiC (Silicon Carbide) Schottky	100 µA	TO-220-2	TO-220-2	650 V	8 A	Through Hole	1.7 V	175 ░C	-55 °C	0 ns

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Digikey	N/A	0	$ 2.56

General part information

Diode 650 V 8A Through Hole TO-220-2

Technical documentation and resources