Discrete Semiconductor Products

2SC4213BTE85LF

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Toshiba Semiconductor and Storage

TRANS NPN 20V 0.3A USM

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Discrete Semiconductor Products

Active

Toshiba Semiconductor and Storage

TRANS NPN 20V 0.3A USM

Technical Specifications

Parameters and characteristics for this part

Specification	2SC4213BTE85LF

Current - Collector (Ic) (Max) [Max]	300 mA
Current - Collector Cutoff (Max) [Max]	100 nA
DC Current Gain (hFE) (Min) @ Ic, Vce [Min]	350
Frequency - Transition	30 MHz
Mounting Type	Surface Mount
Operating Temperature	125 ¯C
Package / Case	SC-70, SOT-323
Power - Max [Max]	100 mW
Supplier Device Package	SC-70
Transistor Type	NPN
Vce Saturation (Max) @ Ib, Ic	100 mV
Voltage - Collector Emitter Breakdown (Max)	20 V

Part	Current - Collector (Ic) (Max) [Max]	Current - Collector Cutoff (Max) [Max]	DC Current Gain (hFE) (Min) @ Ic, Vce [Min]	Transistor Type	Power - Max [Max]	Vce Saturation (Max) @ Ib, Ic	Supplier Device Package	Package / Case	Mounting Type	Operating Temperature	Voltage - Collector Emitter Breakdown (Max)	Frequency - Transition
Toshiba Semiconductor and Storage 2SC4213-A(TE85L,F)	300 mA	100 nA	200	NPN	100 mW	100 mV	SC-70	SC-70 SOT-323	Surface Mount	125 ¯C	20 V	30 MHz
Toshiba Semiconductor and Storage 2SC4213BTE85LF	300 mA	100 nA	350	NPN	100 mW	100 mV	SC-70	SC-70 SOT-323	Surface Mount	125 ¯C	20 V	30 MHz

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

General part information

Bipolar (BJT) Transistor NPN 20 V 300 mA 30MHz 100 mW Surface Mount SC-70

Technical documentation and resources