FFSH50120A
ActiveSILICON CARBIDE SCHOTTKY DIODE, ELITESIC SERIES, SINGLE, 1.2 KV, 50 A, 252 NC, TO-247
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FFSH50120A
ActiveSILICON CARBIDE SCHOTTKY DIODE, ELITESIC SERIES, SINGLE, 1.2 KV, 50 A, 252 NC, TO-247
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Technical Specifications
Parameters and characteristics for this part
| Specification | FFSH50120A |
|---|---|
| Capacitance @ Vr, F | 2560 pF |
| Current - Average Rectified (Io) | 77 A |
| Current - Reverse Leakage @ Vr | 200 µA |
| Mounting Type | Through Hole |
| Operating Temperature - Junction [Max] | 175 ░C |
| Operating Temperature - Junction [Min] | -55 C |
| Package / Case | TO-247-2 |
| Reverse Recovery Time (trr) | 0 ns |
| Speed | No Recovery Time |
| Supplier Device Package | TO-247-2 |
| Technology | SiC (Silicon Carbide) Schottky |
| Voltage - DC Reverse (Vr) (Max) [Max] | 1.2 kV |
Pricing
Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly
| Distributor | Package | Quantity | $ | |
|---|---|---|---|---|
| Digikey | Tube | 1 | $ 20.08 | |
| 30 | $ 16.65 | |||
| 120 | $ 15.61 | |||
| 510 | $ 13.32 | |||
| Newark | Each | 1 | $ 28.56 | |
| 5 | $ 27.67 | |||
| 10 | $ 26.78 | |||
| 25 | $ 25.89 | |||
| 50 | $ 25.00 | |||
| 100 | $ 24.46 | |||
| 250 | $ 23.92 | |||
| ON Semiconductor | N/A | 1 | $ 11.85 | |
Description
General part information
FFSH50120A Series
Silicon Carbide (SiC) Schottky Diodes use a completely new technology that provides superior switching performance and higher reliability to silicon. No reverse recovery current, temperature independent switching characteristics, and excellent thermal performance sets Silicon Carbide as the next generation of power semiconductor. System benefits include highest efficiency, faster operating frequency, increased power density, reduced EMI, and reduced system size and cost.
Documents
Technical documentation and resources