SIHFU9220-GE3

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MOSFET P-CH 200V 3.6A TO251AA

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Discrete Semiconductor Products

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MOSFET P-CH 200V 3.6A TO251AA

Technical Specifications

Parameters and characteristics for this part

Specification	SIHFU9220-GE3

Current - Continuous Drain (Id) @ 25°C	3.6 A
Drain to Source Voltage (Vdss)	200 V
Drive Voltage (Max Rds On, Min Rds On)	10 V
FET Type	P-Channel
Gate Charge (Qg) (Max) @ Vgs [x]	20 nC
Input Capacitance (Ciss) (Max) @ Vds	3400 pF
Mounting Type	Through Hole
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	IPAK, TO-251-3 Short Leads, TO-251AA
Power Dissipation (Max)	42 W, 2.5 W
Rds On (Max) @ Id, Vgs	1.5 Ohm
Supplier Device Package	TO-251AA
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max) @ Id	4 V

Part	Current - Continuous Drain (Id) @ 25°C	Supplier Device Package	Rds On (Max) @ Id, Vgs	Input Capacitance (Ciss) (Max) @ Vds	Mounting Type	Technology	Drain to Source Voltage (Vdss)	Vgs (Max)	FET Type	Operating Temperature [Min]	Operating Temperature [Max]	Gate Charge (Qg) (Max) @ Vgs [x]	Vgs(th) (Max) @ Id	Package / Case	Drive Voltage (Max Rds On, Min Rds On)	Power Dissipation (Max)
Vishay General Semiconductor - Diodes Division SIHFU9220-GE3	3.6 A	TO-251AA	1.5 Ohm	3400 pF	Through Hole	MOSFET (Metal Oxide)	200 V	20 V	P-Channel	-55 °C	150 °C	20 nC	4 V	IPAK TO-251-3 Short Leads TO-251AA	10 V	2.5 W 42 W

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General part information

P-Channel 200 V 3.6A (Tc) 2.5W (Ta), 42W (Tc) Through Hole TO-251AA

Technical documentation and resources