Discrete Semiconductor Products

HN4B102J(TE85L,F)

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BIPOLAR TRANSISTORS, NPN + PNP BIPOLAR TRANSISTOR, 30 V/-30 V, 2 A/-1.8 A, SMV

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Discrete Semiconductor Products

Active

BIPOLAR TRANSISTORS, NPN + PNP BIPOLAR TRANSISTOR, 30 V/-30 V, 2 A/-1.8 A, SMV

Technical Specifications

Parameters and characteristics for this part

Specification	HN4B102J(TE85L,F)

Current - Collector (Ic) (Max)	1.8 A, 2 A
Current - Collector Cutoff (Max) [Max]	100 nA
DC Current Gain (hFE) (Min) @ Ic, Vce [Min]	200
Mounting Type	Surface Mount
Operating Temperature	150 °C
Package / Case	SOT-753, SC-74A
Power - Max [Max]	750 mW
Supplier Device Package	SMV
Transistor Type	1 NPN, 1 PNP
Vce Saturation (Max) @ Ib, Ic [Max]	200 mV
Vce Saturation (Max) @ Ib, Ic [Min]	140 mV
Voltage - Collector Emitter Breakdown (Max) [Max]	30 V

Bipolar Transistors, NPN + PNP Bipolar Transistor, 30 V/-30 V, 2 A/-1.8 A, SMV

Part	Operating Temperature	Package / Case	DC Current Gain (hFE) (Min) @ Ic, Vce [Min]	Transistor Type	Current - Collector Cutoff (Max) [Max]	Voltage - Collector Emitter Breakdown (Max) [Max]	Current - Collector (Ic) (Max)	Power - Max [Max]	Supplier Device Package	Mounting Type	Vce Saturation (Max) @ Ib, Ic [Min]	Vce Saturation (Max) @ Ib, Ic [Max]
Toshiba Semiconductor and Storage HN4B102J(TE85L,F)	150 °C	SC-74A SOT-753	200	1 NPN 1 PNP	100 nA	30 V	1.8 A 2 A	750 mW	SMV	Surface Mount	140 mV	200 mV

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

General part information

Bipolar Transistors, NPN + PNP Bipolar Transistor, 30 V/-30 V, 2 A/-1.8 A, SMV

Technical documentation and resources