Discrete Semiconductor Products

S3D03065A

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DIODE SIL CARB 650V 3A TO220AC

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Discrete Semiconductor Products

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DIODE SIL CARB 650V 3A TO220AC

Technical Specifications

Parameters and characteristics for this part

Specification	S3D03065A

Capacitance @ Vr, F	179 pF
Current - Average Rectified (Io)	3 A
Current - Reverse Leakage @ Vr	5 µA
Mounting Type	Through Hole
Operating Temperature - Junction [Max]	175 ░C
Operating Temperature - Junction [Min]	-55 C
Package / Case	TO-220-2
Reverse Recovery Time (trr)	0 ns
Speed	No Recovery Time
Supplier Device Package	TO-220AC (TO-220-2)
Technology	SiC (Silicon Carbide) Schottky
Voltage - DC Reverse (Vr) (Max) [Max]	650 V
Voltage - Forward (Vf) (Max) @ If	1.7 V

Part	Package / Case	Mounting Type	Current - Reverse Leakage @ Vr	Current - Average Rectified (Io)	Supplier Device Package	Capacitance @ Vr, F	Operating Temperature - Junction [Max]	Operating Temperature - Junction [Min]	Technology	Speed	Voltage - DC Reverse (Vr) (Max) [Max]	Voltage - Forward (Vf) (Max) @ If
SMC Diode Solutions S3D03065E	DPAK (2 Leads + Tab) SC-63 TO-252-3	Surface Mount	5 µA	3 A	DPAK	179 pF	175 ░C	-55 C	SiC (Silicon Carbide) Schottky	No Recovery Time	650 V	1.7 V
SMC Diode Solutions S3D03065A	TO-220-2	Through Hole	5 µA	3 A	TO-220AC (TO-220-2)	179 pF	175 ░C	-55 C	SiC (Silicon Carbide) Schottky	No Recovery Time	650 V	1.7 V
SMC Diode Solutions S3D03065F	TO-220-2 Full Pack	Through Hole	5 µA	3 A	ITO-220AC (TO-220-2F)	179 pF	175 ░C	-55 C	SiC (Silicon Carbide) Schottky	No Recovery Time	650 V	1.7 V

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

General part information

Diode 650 V 3A Through Hole TO-220AC (TO-220-2)

Technical documentation and resources