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8 PowerWDFN
Discrete Semiconductor Products

NVTFS052P04M8LTAG

Active
ON Semiconductor

POWER MOSFET, SINGLE P-CHANNEL, -40V, 69MΩ, -13.2A

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8 PowerWDFN
Discrete Semiconductor Products

NVTFS052P04M8LTAG

Active
ON Semiconductor

POWER MOSFET, SINGLE P-CHANNEL, -40V, 69MΩ, -13.2A

Technical Specifications

Parameters and characteristics for this part

SpecificationNVTFS052P04M8LTAG
Current - Continuous Drain (Id) @ 25°C13.2 A, 4.7 A
Drain to Source Voltage (Vdss)40 V
Drive Voltage (Max Rds On, Min Rds On)10 V, 4.5 V
FET TypeP-Channel
Gate Charge (Qg) (Max) @ Vgs6.3 nC
GradeAutomotive
Input Capacitance (Ciss) (Max) @ Vds424 pF
Mounting TypeSurface Mount
Operating Temperature [Max]175 ░C
Operating Temperature [Min]-55 °C
Package / Case8-PowerWDFN
Power Dissipation (Max)2.9 W, 23 W
QualificationAEC-Q101
Rds On (Max) @ Id, Vgs69 mOhm
Supplier Device Package8-WDFN (3.3x3.3)
TechnologyMOSFET (Metal Oxide)
Vgs (Max)20 V
Vgs(th) (Max) @ Id2.4 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

DistributorPackageQuantity$
DigikeyCut Tape (CT) 1$ 1.19
10$ 0.81
100$ 0.54
500$ 0.42
Digi-Reel® 1$ 1.19
10$ 0.81
100$ 0.54
500$ 0.42
Tape & Reel (TR) 1500$ 0.33
3000$ 0.31
4500$ 0.30
7500$ 0.29
10500$ 0.29
NewarkEach 1000$ 0.38
2500$ 0.31
10000$ 0.30
ON SemiconductorN/A 1$ 0.26

Description

General part information

NVTFS052P04M8L Series

Automotive Power MOSFET in a 3.3x3.3 wDFN8 package designed for compact and efficient designs and including high thermal performance. AEC-Q101 Qualified MOSFET and PPAP capable suitable for automotive applications requiring enhanced board level reliability.