Discrete Semiconductor Products

SIJA58ADP-T1-GE3

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MOSFET, N-CH, 109A, 40V, POWERPAK SO

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Discrete Semiconductor Products

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MOSFET, N-CH, 109A, 40V, POWERPAK SO

Technical Specifications

Parameters and characteristics for this part

Specification	SIJA58ADP-T1-GE3

Current - Continuous Drain (Id) @ 25°C	32.3 A, 109 A
Drain to Source Voltage (Vdss)	40 V
Drive Voltage (Max Rds On, Min Rds On)	10 V, 4.5 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	61 nC
Input Capacitance (Ciss) (Max) @ Vds	3030 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	PowerPAK® SO-8
Power Dissipation (Max)	56.8 W, 5 W
Rds On (Max) @ Id, Vgs [Max]	2.65 mOhm
Supplier Device Package	PowerPAK® SO-8
Technology	MOSFET (Metal Oxide)
Vgs (Max)	-16 V, 20 V
Vgs(th) (Max) @ Id	2.4 V

Part	Supplier Device Package	Vgs (Max)	Mounting Type	Rds On (Max) @ Id, Vgs [Max]	FET Type	Input Capacitance (Ciss) (Max) @ Vds	Current - Continuous Drain (Id) @ 25°C	Drive Voltage (Max Rds On, Min Rds On)	Package / Case	Vgs(th) (Max) @ Id	Power Dissipation (Max)	Technology	Gate Charge (Qg) (Max) @ Vgs	Drain to Source Voltage (Vdss)	Operating Temperature [Min]	Operating Temperature [Max]
Vishay General Semiconductor - Diodes Division SIJA58ADP-T1-GE3	PowerPAK® SO-8	-16 V 20 V	Surface Mount	2.65 mOhm	N-Channel	3030 pF	32.3 A 109 A	4.5 V 10 V	PowerPAK® SO-8	2.4 V	5 W 56.8 W	MOSFET (Metal Oxide)	61 nC	40 V	-55 °C	150 °C

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

General part information

N-Channel 40 V 32.3A (Ta), 109A (Tc) 5W (Ta), 56.8W (Tc) Surface Mount PowerPAK® SO-8