Discrete Semiconductor Products

2SK3707-1E

Obsolete

MOSFET N-CH 100V 20A TO220F-3SG

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Discrete Semiconductor Products

Obsolete

MOSFET N-CH 100V 20A TO220F-3SG

Technical Specifications

Parameters and characteristics for this part

Specification	2SK3707-1E

Current - Continuous Drain (Id) @ 25°C	20 A
Drain to Source Voltage (Vdss)	100 V
Drive Voltage (Max Rds On, Min Rds On) [Max]	4 V
Drive Voltage (Max Rds On, Min Rds On) [Min]	10 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]	44 nC
Input Capacitance (Ciss) (Max) @ Vds	2150 pF
Mounting Type	Through Hole
Operating Temperature	150 °C
Package / Case	TO-220-3 Full Pack
Power Dissipation (Max)	25 W, 2 W
Rds On (Max) @ Id, Vgs	60 mOhm
Supplier Device Package	TO-220F-3SG
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V

Part	Current - Continuous Drain (Id) @ 25°C	Supplier Device Package	Input Capacitance (Ciss) (Max) @ Vds	Rds On (Max) @ Id, Vgs	Gate Charge (Qg) (Max) @ Vgs [Max]	Package / Case	Drain to Source Voltage (Vdss)	Technology	Mounting Type	Operating Temperature	FET Type	Drive Voltage (Max Rds On, Min Rds On) [Max]	Drive Voltage (Max Rds On, Min Rds On) [Min]	Power Dissipation (Max)	Vgs (Max)
ON Semiconductor 2SK3707	20 A	TO-220ML	2150 pF	60 mOhm	44 nC	TO-220-3 Full Pack	100 V	MOSFET (Metal Oxide)	Through Hole	150 °C	N-Channel	4 V	10 V	2 W 25 W	20 V
ON Semiconductor 2SK3707-1E	20 A	TO-220F-3SG	2150 pF	60 mOhm	44 nC	TO-220-3 Full Pack	100 V	MOSFET (Metal Oxide)	Through Hole	150 °C	N-Channel	4 V	10 V	2 W 25 W	20 V

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

General part information

N-Channel 100 V 20A (Ta) 2W (Ta), 25W (Tc) Through Hole TO-220F-3SG

Technical documentation and resources

No documents available