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Technical Specifications
Parameters and characteristics for this part
| Specification | MBRS3100T3H |
|---|---|
| Current - Average Rectified (Io) | 3 A |
| Current - Reverse Leakage @ Vr | 50 µA |
| Mounting Type | Surface Mount |
| Operating Temperature - Junction [Max] | 175 ░C |
| Operating Temperature - Junction [Min] | -65 C |
| Package / Case | SMC, DO-214AB |
| Speed | 200 mA, 500 ns |
| Supplier Device Package | SMC |
| Technology | Schottky |
| Voltage - DC Reverse (Vr) (Max) [Max] | 100 V |
| Voltage - Forward (Vf) (Max) @ If [Max] | 900 mV |
Pricing
Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly
| Distributor | Package | Quantity | $ | |
|---|---|---|---|---|
Description
General part information
MBRS3100T3 Series
The Schottky Rectifier employs the Schottky Barrier principle in a large area metal-to-silicon power diode. State of the art geometry features epitaxial construction with oxide passivation and metal overlay contact. It is ideally suited for use as rectifiers in low voltage, high frequency rectification, or as free wheeling and polarity protection diodes in surface mount applications where compact size and weight are critical to the system.
Documents
Technical documentation and resources
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