Discrete Semiconductor Products

SI1551DL-T1-E3

Obsolete

MOSFET N/P-CH 20V SC70-6

Search across all available documentation for this part.

Discrete Semiconductor Products

Obsolete

MOSFET N/P-CH 20V SC70-6

Technical Specifications

Parameters and characteristics for this part

Specification	SI1551DL-T1-E3

Configuration	N and P-Channel
Current - Continuous Drain (Id) @ 25°C	410 mA, 290 mA
Drain to Source Voltage (Vdss)	20 V
FET Feature	Logic Level Gate
Gate Charge (Qg) (Max) @ Vgs [Max]	1.5 nC
Mounting Type	Surface Mount
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	6-TSSOP, SC-88, SOT-363
Power - Max [Max]	270 mW
Rds On (Max) @ Id, Vgs	1.9 Ohm
Supplier Device Package	SC-70-6
Technology	MOSFET (Metal Oxide)
Vgs(th) (Max) @ Id	1.5 V

Part	Supplier Device Package	Power - Max [Max]	Package / Case	Mounting Type	Operating Temperature [Min]	Operating Temperature [Max]	Vgs(th) (Max) @ Id	Gate Charge (Qg) (Max) @ Vgs [Max]	Technology	FET Feature	Drain to Source Voltage (Vdss)	Configuration	Rds On (Max) @ Id, Vgs	Current - Continuous Drain (Id) @ 25°C
Vishay General Semiconductor - Diodes Division SI1551DL-T1-E3	SC-70-6	270 mW	6-TSSOP SC-88 SOT-363	Surface Mount	-55 °C	150 °C	1.5 V	1.5 nC	MOSFET (Metal Oxide)	Logic Level Gate	20 V	N and P-Channel	1.9 Ohm	290 mA 410 mA
Vishay General Semiconductor - Diodes Division SI1551DL-T1-GE3	SC-70-6	270 mW	6-TSSOP SC-88 SOT-363	Surface Mount	-55 °C	150 °C	1.5 V	1.5 nC	MOSFET (Metal Oxide)	Logic Level Gate	20 V	N and P-Channel	1.9 Ohm	290 mA 410 mA

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

General part information

Mosfet Array 20V 290mA, 410mA 270mW Surface Mount SC-70-6

Technical documentation and resources

No documents available