Discrete Semiconductor Products

MUN5241T1G

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BIPOLAR PRE-BIASED / DIGITAL TRANSISTOR, BRT, SINGLE NPN, 50 V, 100 MA

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Discrete Semiconductor Products

Active

BIPOLAR PRE-BIASED / DIGITAL TRANSISTOR, BRT, SINGLE NPN, 50 V, 100 MA

Technical Specifications

Parameters and characteristics for this part

Specification	MUN5241T1G

Current - Collector (Ic) (Max) [Max]	100 mA
Current - Collector Cutoff (Max) [Max]	500 nA
DC Current Gain (hFE) (Min) @ Ic, Vce [Min]	160 hFE
Mounting Type	Surface Mount
Package / Case	SC-70, SOT-323
Power - Max [Max]	202 mW
Resistor - Base (R1)	100 kOhms
Transistor Type	NPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic	250 mV
Voltage - Collector Emitter Breakdown (Max) [Max]	50 V

Part	Resistor - Base (R1)	Mounting Type	Power - Max [Max]	Vce Saturation (Max) @ Ib, Ic	Current - Collector (Ic) (Max) [Max]	Voltage - Collector Emitter Breakdown (Max) [Max]	Package / Case	DC Current Gain (hFE) (Min) @ Ic, Vce [Min]	Transistor Type	Current - Collector Cutoff (Max) [Max]
ON Semiconductor MUN5241T1G	100 kOhms	Surface Mount	202 mW	250 mV	100 mA	50 V	SC-70 SOT-323	160 hFE	NPN - Pre-Biased	500 nA

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General part information

Pre-Biased Bipolar Transistor (BJT) NPN - Pre-Biased 50 V 100 mA 202 mW Surface Mount SC-70-3 (SOT323)

Technical documentation and resources