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DO-213AB
Discrete Semiconductor Products

GL41YHE3_A/I

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Vishay General Semiconductor - Diodes Division

DIODE GEN PURP 1.6KV 1A DO213AB

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DO-213AB
Discrete Semiconductor Products

GL41YHE3_A/I

Active
Vishay General Semiconductor - Diodes Division

DIODE GEN PURP 1.6KV 1A DO213AB

Deep-Dive with AI

Technical Specifications

Parameters and characteristics for this part

SpecificationGL41YHE3_A/I
Capacitance @ Vr, F8 pF
Current - Average Rectified (Io)1 A
Current - Reverse Leakage @ Vr10 µA
Mounting TypeSurface Mount
Operating Temperature - Junction [Max]175 ░C
Operating Temperature - Junction [Min]-65 C
Package / CaseDO-213AB, MELF (Glass)
SpeedStandard Recovery >500ns
Speed200 mA
Supplier Device PackageDO-213AB
TechnologyStandard
Voltage - Forward (Vf) (Max) @ If1.2 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

DistributorPackageQuantity$
DigikeyCut Tape (CT) 1$ 0.59
Digi-Reel® 1$ 0.59
Tape & Reel (TR) 10000$ 0.20
25000$ 0.19

Description

General part information

GL41 Series

Diode 1600 V 1A Surface Mount DO-213AB

Documents

Technical documentation and resources