Discrete Semiconductor Products

PSMNR67-30YLEX

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PSMNR67-30YLE/SOT1023/4 LEADS

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Discrete Semiconductor Products

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PSMNR67-30YLE/SOT1023/4 LEADS

Technical Specifications

Parameters and characteristics for this part

Specification	PSMNR67-30YLEX

Current - Continuous Drain (Id) @ 25°C	365 A
Drain to Source Voltage (Vdss)	30 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]	185 nC
Input Capacitance (Ciss) (Max) @ Vds	12417 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	175 ░C
Operating Temperature [Min]	-55 °C
Package / Case	SOT-1023, 4-LFPAK
Power Dissipation (Max)	333 W
Rds On (Max) @ Id, Vgs	0.7 mOhm
Supplier Device Package	Power-SO8, LFPAK56
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max) @ Id [Max]	2.2 V

Part	Mounting Type	Power Dissipation (Max)	Vgs(th) (Max) @ Id [Max]	Rds On (Max) @ Id, Vgs	Input Capacitance (Ciss) (Max) @ Vds	Supplier Device Package	FET Type	Technology	Operating Temperature [Min]	Operating Temperature [Max]	Drain to Source Voltage (Vdss)	Gate Charge (Qg) (Max) @ Vgs [Max]	Current - Continuous Drain (Id) @ 25°C	Vgs (Max)	Package / Case
Freescale Semiconductor - NXP PSMNR67-30YLEX	Surface Mount	333 W	2.2 V	0.7 mOhm	12417 pF	LFPAK56 Power-SO8	N-Channel	MOSFET (Metal Oxide)	-55 °C	175 ░C	30 V	185 nC	365 A	20 V	SOT-1023 4-LFPAK

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

General part information

N-Channel 30 V 365A (Tc) 333W (Tc) Surface Mount LFPAK56, Power-SO8

Technical documentation and resources