Discrete Semiconductor Products

IRF620B_FP001

Obsolete

MOSFET N-CH 200V 5A TO220-3

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Discrete Semiconductor Products

Obsolete

MOSFET N-CH 200V 5A TO220-3

Technical Specifications

Parameters and characteristics for this part

Specification	IRF620B_FP001

Current - Continuous Drain (Id) @ 25°C	5 A
Drain to Source Voltage (Vdss)	200 V
Drive Voltage (Max Rds On, Min Rds On)	10 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]	16 nC
Input Capacitance (Ciss) (Max) @ Vds	390 pF
Mounting Type	Through Hole
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	TO-220-3
Power Dissipation (Max)	47 W
Supplier Device Package	TO-220-3
Technology	MOSFET (Metal Oxide)
Vgs (Max)	30 V
Vgs(th) (Max) @ Id	4 V

Part	Supplier Device Package	Technology	Gate Charge (Qg) (Max) @ Vgs [Max]	Operating Temperature [Min]	Operating Temperature [Max]	Vgs(th) (Max) @ Id	Input Capacitance (Ciss) (Max) @ Vds	Power Dissipation (Max)	Mounting Type	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) @ 25°C	FET Type	Drive Voltage (Max Rds On, Min Rds On)	Package / Case	Vgs (Max)
ON Semiconductor IRF620B_FP001	TO-220-3	MOSFET (Metal Oxide)	16 nC	-55 °C	150 °C	4 V	390 pF	47 W	Through Hole	200 V	5 A	N-Channel	10 V	TO-220-3	30 V

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

General part information

N-Channel 200 V 5A (Tc) 47W (Tc) Through Hole TO-220-3

Technical documentation and resources