Discrete Semiconductor Products

2SC4944-GR(TE85L,F

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TRANS GP BJT NPN 50V 0.15A 5-PIN USV T/R

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Discrete Semiconductor Products

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TRANS GP BJT NPN 50V 0.15A 5-PIN USV T/R

Technical Specifications

Parameters and characteristics for this part

Specification	2SC4944-GR(TE85L,F

Current - Collector (Ic) (Max) [Max]	150 mA
Current - Collector Cutoff (Max) [Max]	100 nA
DC Current Gain (hFE) (Min) @ Ic, Vce	200 hFE
Mounting Type	Surface Mount
Operating Temperature	125 ¯C
Package / Case	SOT-353, SC-70-5, 5-TSSOP
Power - Max [Max]	200 mW
Supplier Device Package	USV
Transistor Type	NPN
Vce Saturation (Max) @ Ib, Ic	250 mV
Voltage - Collector Emitter Breakdown (Max) [Max]	50 V

Part	Vce Saturation (Max) @ Ib, Ic	Mounting Type	Package / Case	Current - Collector (Ic) (Max) [Max]	Supplier Device Package	Current - Collector Cutoff (Max) [Max]	Voltage - Collector Emitter Breakdown (Max) [Max]	DC Current Gain (hFE) (Min) @ Ic, Vce [Min]	Power - Max [Max]	Transistor Type	Operating Temperature	DC Current Gain (hFE) (Min) @ Ic, Vce
Toshiba Semiconductor and Storage 2SC4944-Y(TE85L,F)	250 mV	Surface Mount	5-TSSOP SC-70-5 SOT-353	150 mA	USV	100 nA	50 V	120	200 mW	2 NPN (Dual) Matched Pair Common Emitter	125 ¯C
Toshiba Semiconductor and Storage 2SC4944-GR(TE85L,F	250 mV	Surface Mount	5-TSSOP SC-70-5 SOT-353	150 mA	USV	100 nA	50 V		200 mW	NPN	125 ¯C	200 hFE

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

General part information

Bipolar (BJT) Transistor NPN 50 V 150 mA 80MHz 200 mW Surface Mount USV

Technical documentation and resources