Discrete Semiconductor Products

6A005B-G

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DIODE GEN PURP 50V 6A R-6

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Discrete Semiconductor Products

Active

DIODE GEN PURP 50V 6A R-6

Technical Specifications

Parameters and characteristics for this part

Specification	6A005B-G

Capacitance	100 pF
Current - Average Rectified (Io)	6 A
Current - Reverse Leakage	10 µA
Mounting Type	Through Hole
Operating Temperature - Junction (Max)	125 °C
Operating Temperature - Junction (Min)	-55 °C
Package / Case	R-6, Axial
Package Name	R-6
Speed	Standard Recovery
Speed - Fast Recovery (Minimum)	200 mA, 500 ns
Speed - Recovery Current	200 mA, 200 mA
Speed - Recovery Time	500 ns
Technology	Standard
Voltage - DC Reverse (Vr) (Max)	50 V
Voltage - Forward (Vf) (Max)	1 V

Part	Package Name	Speed - Fast Recovery (Minimum)	Speed	Speed - Recovery Current	Speed - Recovery Time	Voltage - Forward (Vf) (Max)	Current - Reverse Leakage	Operating Temperature - Junction (Max)	Operating Temperature - Junction (Min)	Capacitance	Current - Average Rectified (Io)	Technology	Voltage - DC Reverse (Vr) (Max)	Package / Case	Mounting Type
Comchip Technology 6A005B-G	R-6	200 mA 500 ns	Standard Recovery	200 mA 200 mA	500 ns	1 V	10 µA	125 °C	-55 °C	100 pF	6 A	Standard	50 V	Axial R-6	Through Hole
Comchip Technology 6A005-G	R-6	200 mA 500 ns	Standard Recovery	200 mA 200 mA	500 ns	1 V	10 µA	125 °C	-55 °C	100 pF	6 A	Standard	50 V	Axial R-6	Through Hole

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$	Updated

Digikey	Bulk	1000	$ 0.22	1m+
	N/A	0	$ 0.24	1m+

3D models and CAD resources for this part

General part information

Diode 50 V 6A Through Hole R-6

Technical documentation and resources

No documents available