Specification	NTR3162PT1G

Current - Continuous Drain (Id) @ 25°C	2.2 A
Drain to Source Voltage (Vdss)	20 V
Drive Voltage (Max Rds On, Min Rds On)	4.5 V, 1.5 V
FET Type	P-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]	10.3 nC
Input Capacitance (Ciss) (Max) @ Vds	940 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	SOT-23-3, TO-236-3, SC-59
Power Dissipation (Max) [Max]	480 mW
Rds On (Max) @ Id, Vgs	70 mOhm
Supplier Device Package	SOT-23-3 (TO-236)
Technology	MOSFET (Metal Oxide)
Vgs (Max)	8 V
Vgs(th) (Max) @ Id	1 V

NTR3161N Series

20 V, 3.6 A, 70 mOhm Single P-Channel Power MOSFET, SOT-23

Part	Vgs(th) (Max) @ Id	Power Dissipation (Max) [Max]	Gate Charge (Qg) (Max) @ Vgs	Supplier Device Package	Vgs (Max)	FET Type	Input Capacitance (Ciss) (Max) @ Vds	Drain to Source Voltage (Vdss)	Operating Temperature [Min]	Operating Temperature [Max]	Technology	Rds On (Max) @ Id, Vgs	Mounting Type	Package / Case	Current - Continuous Drain (Id) @ 25°C	Drive Voltage (Max Rds On, Min Rds On)	Gate Charge (Qg) (Max) @ Vgs [Max]
ON Semiconductor NTR3161NT1G	1 V	820 mW	7.3 nC	SOT-23-3 (TO-236)	8 V	N-Channel	540 pF	20 V	-55 °C	150 °C	MOSFET (Metal Oxide)	50 mOhm	Surface Mount	SC-59 SOT-23-3 TO-236-3	3.3 A	1.8 V 4.5 V
ON Semiconductor NTR3162PT1G	1 V	480 mW		SOT-23-3 (TO-236)	8 V	P-Channel	940 pF	20 V	-55 °C	150 °C	MOSFET (Metal Oxide)	70 mOhm	Surface Mount	SC-59 SOT-23-3 TO-236-3	2.2 A	1.5 V 4.5 V	10.3 nC

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

General part information

This is a 20 V P-Channel Power MOSFET.

Technical documentation and resources