Discrete Semiconductor Products

1N4937

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ON Semiconductor

DIODE GEN PURP 600V 1A AXIAL

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Discrete Semiconductor Products

Active

ON Semiconductor

DIODE GEN PURP 600V 1A AXIAL

Technical Specifications

Parameters and characteristics for this part

Specification	1N4937

Current - Average Rectified (Io)	1 A
Current - Reverse Leakage @ Vr	5 µA
Mounting Type	Through Hole
Operating Temperature - Junction [Max]	150 °C
Operating Temperature - Junction [Min]	-65 C
Package / Case	DO-204AL, DO-41, Axial
Reverse Recovery Time (trr)	300 ns
Speed	200 mA, 500 ns
Supplier Device Package	Axial
Technology	Standard
Voltage - DC Reverse (Vr) (Max) [Max]	600 V
Voltage - Forward (Vf) (Max) @ If	1.2 V

Part	Speed	Current - Average Rectified (Io)	Voltage - Forward (Vf) (Max) @ If	Operating Temperature - Junction [Max]	Operating Temperature - Junction [Min]	Mounting Type	Technology	Current - Reverse Leakage @ Vr	Package / Case	Reverse Recovery Time (trr)	Supplier Device Package	Voltage - DC Reverse (Vr) (Max) [Max]
ON Semiconductor 1N4937	200 mA 500 ns	1 A	1.2 V	150 °C	-65 C	Through Hole	Standard	5 µA	Axial DO-204AL DO-41	300 ns	Axial	600 V
ON Semiconductor 1N4937GP	200 mA 500 ns	1 A	1.2 V	150 °C	-50 °C	Through Hole	Standard	5 µA	Axial DO-204AL DO-41	150 ns	DO-41	600 V
ON Semiconductor 1N4937RL	200 mA 500 ns	1 A	1.2 V	150 °C	-65 C	Through Hole	Standard	5 µA	Axial DO-204AL DO-41	300 ns	Axial	600 V
ON Semiconductor 1N4937RLG	200 mA 500 ns	1 A	1.2 V	150 °C	-65 C	Through Hole	Standard	5 µA	Axial DO-204AL DO-41	300 ns	Axial	600 V

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

General part information

Diode 600 V 1A Through Hole Axial

Technical documentation and resources

No documents available