Littelfuse Power Semi TO-263 3 1S2C image

Discrete Semiconductor Products

IXTA56N15T

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Littelfuse/Commercial Vehicle Products

DISCMSFT NCHTRENCHGATE-GEN1 TO-263D2/ TUBE

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Discrete Semiconductor Products

IXTA56N15T

Active

Littelfuse/Commercial Vehicle Products

DISCMSFT NCHTRENCHGATE-GEN1 TO-263D2/ TUBE

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Specifications Series Pricing Description Documents

Technical Specifications

Parameters and characteristics for this part

Specification	IXTA56N15T

Current - Continuous Drain (Id) @ 25°C	56 A
Drain to Source Voltage (Vdss)	150 V
Drive Voltage (Max Rds On, Min Rds On)	10 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	34 nC
Input Capacitance (Ciss) (Max) @ Vds	2250 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	175 ░C
Operating Temperature [Min]	-55 °C
Package / Case	D2PAK (2 Leads + Tab), TO-263AB, TO-263-3
Power Dissipation (Max) [Max]	300 W
Rds On (Max) @ Id, Vgs [Max]	36 mOhm
Supplier Device Package	TO-263AA
Technology	MOSFET (Metal Oxide)
Vgs (Max)	30 V
Vgs(th) (Max) @ Id	4.5 V

IXTA56N15T Series

DiscMSFT NChTrenchGate-Gen1 TO-263D2

Part	Rds On (Max) @ Id, Vgs [Max]	Operating Temperature [Min]	Operating Temperature [Max]	Vgs (Max)	Drain to Source Voltage (Vdss)	Package / Case	Power Dissipation (Max) [Max]	Vgs(th) (Max) @ Id	Drive Voltage (Max Rds On, Min Rds On)	Gate Charge (Qg) (Max) @ Vgs	Technology	Supplier Device Package	Mounting Type	FET Type	Input Capacitance (Ciss) (Max) @ Vds	Current - Continuous Drain (Id) @ 25°C
Littelfuse/Commercial Vehicle Products IXTA56N15T	36 mOhm	-55 °C	175 ░C	30 V	150 V	D2PAK (2 Leads + Tab) TO-263-3 TO-263AB	300 W	4.5 V	10 V	34 nC	MOSFET (Metal Oxide)	TO-263AA	Surface Mount	N-Channel	2250 pF	56 A

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Digikey	Tube	300	$ 2.15
Newark	Each	100	$ 2.23
		500	$ 2.03
		1000	$ 1.79
		2500	$ 1.67

Description

General part information

IXTA56N15T Series

Trench Gate Power MOSFETs are ideally suited for low voltage/ high current applications, requiring an exceedingly low RDS(on), thus guaranteeing very low power Dissipation. This, combined with wide ranging operating junction temperature from -40 °C to 175 °C make them suitable candidates for automobile applications and other similar demanding applications in harsh environments. Advantages: Easy to Mount Space Savings High power density

Documents

Technical documentation and resources