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Littelfuse Power Semiconductors W63 Image
Discrete Semiconductor Products

MDD600-14N1

Obsolete
LITTELFUSE

DIODE MODULE GEN PURP 1400V 883A

Littelfuse Power Semiconductors W63 Image
Discrete Semiconductor Products

MDD600-14N1

Obsolete
LITTELFUSE

DIODE MODULE GEN PURP 1400V 883A

Technical Specifications

Parameters and characteristics for this part

SpecificationMDD600-14N1
Current - Average Rectified (Io) (per Diode)883 A
Current - Reverse Leakage @ Vr50 mA
Diode Configuration1 Pair Series Connection
Mounting TypeChassis Mount
Operating Temperature - Junction [Max]125 °C
Operating Temperature - Junction [Min]-40 °C
Package / CaseModule
Reverse Recovery Time (trr)18 µs
Speed [Min]200 mA, 500 ns
TechnologyStandard
Voltage - DC Reverse (Vr) (Max) [Max]1400 V
Voltage - Forward (Vf) (Max) @ If [Max]1.15 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

DistributorPackageQuantity$Updated
DigikeyN/A 0$ 0.001m+

Description

General part information

MDD600-14N1 Series

The Littelfuse range of isolated base pressure contact thyristor and diode modules, designed to industry standard outlines is perfect for all your needs. Available in 9 standard configurations, all devices offer full pressure contact construction for maximum reliability and performance at rated current. These products have a VRRM/VDRM between 1200V to 3600V and are available as dual thyristor, dual diode or thyristor/diode options. Single diode/single thyristor options are also available. For additional technical details, please contact support .