Discrete Semiconductor Products

IRF3205ZSTRL

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MOSFET N-CH 55V 75A D2PAK

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Discrete Semiconductor Products

Unknown

MOSFET N-CH 55V 75A D2PAK

Technical Specifications

Parameters and characteristics for this part

Specification	IRF3205ZSTRL

Current - Continuous Drain (Id) @ 25°C	75 A
Drain to Source Voltage (Vdss)	55 V
Drive Voltage (Max Rds On, Min Rds On)	10 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]	110 nC
Input Capacitance (Ciss) (Max) @ Vds	3450 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	175 ░C
Operating Temperature [Min]	-55 °C
Package / Case	D2PAK (2 Leads + Tab), TO-263AB, TO-263-3
Power Dissipation (Max)	170 W
Rds On (Max) @ Id, Vgs [Max]	6.5 mOhm
Supplier Device Package	TO-263 (D2PAK)
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max) @ Id	4 V

Part	Package / Case	FET Type	Input Capacitance (Ciss) (Max) @ Vds	Rds On (Max) @ Id, Vgs [Max]	Technology	Drain to Source Voltage (Vdss)	Supplier Device Package	Vgs (Max)	Current - Continuous Drain (Id) @ 25°C	Operating Temperature [Min]	Operating Temperature [Max]	Power Dissipation (Max)	Drive Voltage (Max Rds On, Min Rds On)	Mounting Type	Vgs(th) (Max) @ Id	Gate Charge (Qg) (Max) @ Vgs [Max]
Vishay General Semiconductor - Diodes Division IRF3205ZSTRL	D2PAK (2 Leads + Tab) TO-263-3 TO-263AB	N-Channel	3450 pF	6.5 mOhm	MOSFET (Metal Oxide)	55 V	TO-263 (D2PAK)	20 V	75 A	-55 °C	175 ░C	170 W	10 V	Surface Mount	4 V	110 nC

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General part information

N-Channel 55 V 75A (Tc) 170W (Tc) Surface Mount TO-263 (D2PAK)

Technical documentation and resources