
Discrete Semiconductor Products
DMP21D6UFD-7
ActiveDiodes Inc
ENHANCEMENT MODE TRANSISTOR MOSFET P-CHANNEL -20V -600MA 3-PIN X1-DFN1212 T/R
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Discrete Semiconductor Products
DMP21D6UFD-7
ActiveDiodes Inc
ENHANCEMENT MODE TRANSISTOR MOSFET P-CHANNEL -20V -600MA 3-PIN X1-DFN1212 T/R
Deep-Dive with AI
Technical Specifications
Parameters and characteristics for this part
| Specification | DMP21D6UFD-7 |
|---|---|
| Current - Continuous Drain (Id) @ 25°C | 600 mA |
| Drain to Source Voltage (Vdss) | 20 V |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5 V, 1.2 V |
| FET Type | P-Channel |
| Gate Charge (Qg) (Max) @ Vgs [Max] | 0.8 nC |
| Input Capacitance (Ciss) (Max) @ Vds [Max] | 46.1 pF |
| Mounting Type | Surface Mount |
| Operating Temperature [Max] | 150 °C |
| Operating Temperature [Min] | -55 °C |
| Package / Case | 3-UDFN |
| Rds On (Max) @ Id, Vgs | 1 Ohm |
| Supplier Device Package | X1-DFN1212-3 |
| Technology | MOSFET (Metal Oxide) |
| Vgs (Max) | 8 V |
| Vgs(th) (Max) @ Id | 1 V |
Pricing
Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly
Description
General part information
DMP21D5UFB4 Series
This MOSFET has been designed to minimize the on-state resistance (RDS(on)) and yet maintain superior switching performance, making it ideal for high efficiency power management applications.
Documents
Technical documentation and resources