Discrete Semiconductor Products

SIHG16N50C-E3

LTB

MOSFET N-CH 500V 16A TO247AC

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Discrete Semiconductor Products

LTB

MOSFET N-CH 500V 16A TO247AC

Technical Specifications

Parameters and characteristics for this part

Specification	SIHG16N50C-E3

Current - Continuous Drain (Id) (Tc)	16 A
Drain to Source Voltage (Vdss)	500 V
Drive Voltage (Max Rds On, Min Rds On)	10 V
FET Type	N-Channel
Gate Charge (Max)	68 nC
Input Capacitance (Ciss) (Max)	1900 pF
Mounting Type	Through Hole
Operating Temperature (Max)	150 °C
Operating Temperature (Min)	-55 °C
Package / Case	TO-247-3
Package Name	TO-247AC
Power Dissipation (Max)	250 W
Rds On (Max)	380 mOhm
Technology	MOSFET (Metal Oxide)
Vgs (Max)	30 V
Vgs(th) (Max)	5 V

Part	FET Type	Mounting Type	Rds On (Max)	Input Capacitance (Ciss) (Max)	Vgs (Max)	Gate Charge (Max)	Technology	Vgs(th) (Max)	Package Name	Drive Voltage (Max Rds On, Min Rds On)	Power Dissipation (Max)	Operating Temperature (Min)	Operating Temperature (Max)	Package / Case	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) (Tc)
Vishay Dale SIHG16N50C-E3	N-Channel	Through Hole	380 mOhm	1900 pF	30 V	68 nC	MOSFET (Metal Oxide)	5 V	TO-247AC	10 V	250 W	-55 °C	150 °C	TO-247-3	500 V	16 A

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$	Updated

Digikey	N/A	0	$ 0.00	1m+
	Tube	1	$ 3.10	1m+
		10	$ 2.61
		100	$ 2.11
		500	$ 2.06

3D models and CAD resources for this part

General part information

N-Channel 500 V 16A (Tc) 250W (Tc) Through Hole TO-247AC

Technical documentation and resources