Discrete Semiconductor Products

SUP70101EL-GE3

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MOSFET P-CH 100V 120A TO220AB

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Discrete Semiconductor Products

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MOSFET P-CH 100V 120A TO220AB

Technical Specifications

Parameters and characteristics for this part

Specification	SUP70101EL-GE3

Current - Continuous Drain (Id) @ 25°C	120 A
Drain to Source Voltage (Vdss)	100 V
Drive Voltage (Max Rds On, Min Rds On)	10 V, 4.5 V
FET Type	P-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]	190 nC
Input Capacitance (Ciss) (Max) @ Vds	7000 pF
Mounting Type	Through Hole
Operating Temperature [Max]	175 ░C
Operating Temperature [Min]	-55 °C
Package / Case	TO-220-3
Power Dissipation (Max) [Max]	375 W
Supplier Device Package	TO-220AB
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max) @ Id	2.5 V

Part	Vgs(th) (Max) @ Id	Power Dissipation (Max) [Max]	Vgs (Max)	Operating Temperature [Min]	Operating Temperature [Max]	Package / Case	Drive Voltage (Max Rds On, Min Rds On)	Supplier Device Package	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) @ 25°C	Gate Charge (Qg) (Max) @ Vgs [Max]	FET Type	Technology	Input Capacitance (Ciss) (Max) @ Vds	Mounting Type
Vishay General Semiconductor - Diodes Division SUP70101EL-GE3	2.5 V	375 W	20 V	-55 °C	175 ░C	TO-220-3	4.5 V 10 V	TO-220AB	100 V	120 A	190 nC	P-Channel	MOSFET (Metal Oxide)	7000 pF	Through Hole

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General part information

P-Channel 100 V 120A (Tc) 375W (Tc) Through Hole TO-220AB

Technical documentation and resources