Discrete Semiconductor Products

UJ3C065030T3S

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MOSFET N-CH 650V 85A TO220-3

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Discrete Semiconductor Products

Active

MOSFET N-CH 650V 85A TO220-3

Technical Specifications

Parameters and characteristics for this part

Specification	UJ3C065030T3S

Current - Continuous Drain (Id) @ 25°C	85 A
Drain to Source Voltage (Vdss)	650 V
Drive Voltage (Max Rds On, Min Rds On)	12 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]	51 nC
Input Capacitance (Ciss) (Max) @ Vds	1500 pF
Mounting Type	Through Hole
Operating Temperature [Max]	175 °C
Operating Temperature [Min]	-55 °C
Package / Case	TO-220-3
Power Dissipation (Max)	441 W
Rds On (Max) @ Id, Vgs	35 mOhm
Supplier Device Package	TO-220-3
Vgs (Max)	25 V
Vgs(th) (Max) @ Id	6 V

Part	Rds On (Max) @ Id, Vgs	Operating Temperature [Max]	Operating Temperature [Min]	Input Capacitance (Ciss) (Max) @ Vds	Drive Voltage (Max Rds On, Min Rds On)	Drain to Source Voltage (Vdss)	Mounting Type	Gate Charge (Qg) (Max) @ Vgs [Max]	Vgs(th) (Max) @ Id	FET Type	Power Dissipation (Max)	Package / Case	Supplier Device Package	Current - Continuous Drain (Id) @ 25°C	Vgs (Max)
Qorvo UJ3C065030K3S	35 mOhm	175 °C	-55 °C	1500 pF	12 V	650 V	Through Hole	51 nC	6 V	N-Channel	441 W	TO-247-3	TO-247-3	85 A	25 V
Qorvo UJ3C065030T3S	35 mOhm	175 °C	-55 °C	1500 pF	12 V	650 V	Through Hole	51 nC	6 V	N-Channel	441 W	TO-220-3	TO-220-3	85 A	25 V

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General part information

N-Channel 650 V 85A (Tc) 441W (Tc) Through Hole TO-220-3

Technical documentation and resources

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