Discrete Semiconductor Products

KSC5026MOS

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TRANS GP BJT NPN 800V 1.5A 3-PIN(3+TAB) TO-126 BULK

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Discrete Semiconductor Products

Active

TRANS GP BJT NPN 800V 1.5A 3-PIN(3+TAB) TO-126 BULK

Technical Specifications

Parameters and characteristics for this part

Specification	KSC5026MOS

Current - Collector (Ic) (Max) [Max]	1.5 A
Current - Collector Cutoff (Max) [Max]	10 µA
DC Current Gain (hFE) (Min) @ Ic, Vce	20 hFE
Frequency - Transition	15 MHz
Mounting Type	Through Hole
Operating Temperature	150 °C
Package / Case	TO-225AA, TO-126-3
Power - Max [Max]	20 W
Supplier Device Package	TO-126-3
Transistor Type	NPN
Vce Saturation (Max) @ Ib, Ic	2 V
Voltage - Collector Emitter Breakdown (Max) [Max]	800 V

NPN Silicon Transistor

Part	Transistor Type	Power - Max [Max]	Supplier Device Package	Package / Case	Current - Collector (Ic) (Max) [Max]	Mounting Type	Current - Collector Cutoff (Max) [Max]	Vce Saturation (Max) @ Ib, Ic	Frequency - Transition	Operating Temperature	Voltage - Collector Emitter Breakdown (Max) [Max]	DC Current Gain (hFE) (Min) @ Ic, Vce
ON Semiconductor KSC5026MOS	NPN	20 W	TO-126-3	TO-126-3 TO-225AA	1.5 A	Through Hole	10 µA	2 V	15 MHz	150 °C	800 V	20 hFE

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General part information

NPN Silicon Transistor

Technical documentation and resources