Deep-Dive with AI
Search across all available documentation for this part.
Technical Specifications
Parameters and characteristics for this part
| Specification | IXYP30N120A4 |
|---|---|
| Current - Collector (Ic) (Max) [Max] | 106 A |
| Current - Collector Pulsed (Icm) | 184 A |
| Gate Charge | 57 nC |
| Mounting Type | Through Hole |
| Operating Temperature [Max] | 175 °C |
| Operating Temperature [Min] | -55 °C |
| Package / Case | TO-220-3 |
| Power - Max [Max] | 500 W |
| Reverse Recovery Time (trr) | 42 ns |
| Supplier Device Package | TO-220 (IXYP) |
| Switching Energy | 3.4 mJ, 4 mJ |
| Td (on/off) @ 25°C [custom] | 15 ns |
| Td (on/off) @ 25°C [custom] | 235 ns |
| Test Condition | 5 Ohm, 25 A, 960 V, 15 V |
| Vce(on) (Max) @ Vge, Ic | 1.9 V |
| Voltage - Collector Emitter Breakdown (Max) [Max] | 1200 V |
Pricing
Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly
Description
General part information
Trench - 650V - 1200V GenX51 Series
Utilizing XPT™ thin-wafer technology and 4th generation (GenX4™) Trench IGBT process, these up to 1200V devices helps to reduced gate driver requirements and conduction losses. It features reduced thermal resistance, low losses, high current densities and low gate charge requirement. A positive collector-to-emitter voltage temperature coefficient enables designers to use multiple devices in parallel. Advantages: Ideal for high power density and high inrush currents, low loss applications Hard-switching capable Easy paralleling of devices Reduced gate driver requirements Ease of replacement and availability of isolation package
Documents
Technical documentation and resources