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TO-247N
Discrete Semiconductor Products

SCT4062KEHRC11

Active
Rohm Semiconductor

1200V, 26A, 3-PIN THD, TRENCH-STRUCTURE, SILICON-CARBIDE (SIC) MOSFET FOR AUTOMOTIVE

Deep-Dive with AI

Search across all available documentation for this part.

DocumentsNotes for Temperature Measurement Using Forward Voltage of PN JunctionExplanation for Marking - TO-247N SiC_Marking-e.pdf+65
TO-247N
Discrete Semiconductor Products

SCT4062KEHRC11

Active
Rohm Semiconductor

1200V, 26A, 3-PIN THD, TRENCH-STRUCTURE, SILICON-CARBIDE (SIC) MOSFET FOR AUTOMOTIVE

Deep-Dive with AI

DocumentsNotes for Temperature Measurement Using Forward Voltage of PN JunctionExplanation for Marking - TO-247N SiC_Marking-e.pdf+65

Technical Specifications

Parameters and characteristics for this part

SpecificationSCT4062KEHRC11
Current - Continuous Drain (Id) @ 25°C26 A
Drain to Source Voltage (Vdss)1.2 kV
Drive Voltage (Max Rds On, Min Rds On)18 V
FET TypeN-Channel
Gate Charge (Qg) (Max) @ Vgs64 nC
GradeAutomotive
Input Capacitance (Ciss) (Max) @ Vds1498 pF
Mounting TypeThrough Hole
Operating Temperature175 °C
Package / CaseTO-247-3
Power Dissipation (Max) [Max]115 W
QualificationAEC-Q101
Rds On (Max) @ Id, Vgs81 mOhm
Supplier Device PackageTO-247N
Vgs (Max) [Max]21 V
Vgs (Max) [Min]-4 V
Vgs(th) (Max) @ Id4.8 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

DistributorPackageQuantity$
DigikeyN/A 86$ 12.01
Tube 1$ 13.96
10$ 9.79
450$ 7.05
MouserN/A 1$ 12.01
10$ 10.55
100$ 9.12
250$ 8.84
450$ 8.83
900$ 8.75
NewarkEach 1$ 15.55
10$ 13.71
25$ 13.04
50$ 12.38
100$ 11.70
250$ 11.03
900$ 10.37

Description

General part information

SCT4062KEHR Series

AEC-Q101 qualified automotive grade product. SCT4062KEHR is an SiC (Silicon Carbide) trench MOSFET. Features include high voltage resistance, low ON resistance, and fast switching speed.Advantages of ROHM's 4th Generation SiC MOSFETThis series has about 40% reduction in on-resistance and about 50% reduction in switching loss compared to conventional products. The 15V gate-source voltage makes application design easier.

Documents

Technical documentation and resources

Notes for Temperature Measurement Using Forward Voltage of PN Junction

Thermal Design

Explanation for Marking - TO-247N SiC_Marking-e.pdf

Package Information

4<sup>th</sup> Gen SiC MOSFETs Discrete Package: Characteristics and Precautions for Circuit Design Application Note

Schematic Design & Verification

θ<sub>JC</sub> and Ψ<sub>JT</sub>

Thermal Design

Simulation Verification to Identify Oscillation between Parallel Dies during Design Phase of Power Modules

Technical Article

Application Note for SiC Power Devices and Modules

Schematic Design & Verification

About Flammability of Materials

Environmental Data

Thermal Resistance Measurement Method for SiC MOSFET

Thermal Design

Condition of Soldering

Package Information

What is a Thermal Model? (SiC Power Device)

Thermal Design

Calculating Power Loss from Measured Waveforms

Schematic Design & Verification

4 Steps for Successful Thermal Designing of Power Devices

White Paper

Method for Monitoring Switching Waveform

Schematic Design & Verification

Taping Information

Package Information

What Is Thermal Design

Thermal Design

Basics and Design Guidelines for Gate Drive Circuits

Schematic Design & Verification

Generation Mechanism of Voltage Surge on Commutation Side (Basic)

Technical Article

Notes for Calculating Power Consumption:Static Operation

Thermal Design

Gate-source voltage behaviour in a bridge configuration

Schematic Design & Verification

Design Method for Comparator-less Miller Clamp Circuits

Schematic Design & Verification

Part Explanation

Application Note

Power Eco Family: Overview of ROHM's Power Semiconductor Lineup

White Paper

Overview of ROHM's Simulation Models(for ICs and Discrete Semiconductors)

Technical Article

Example of Heat Dissipation Design for TO Packages: Effect of Heat Dissipation Materials

Thermal Design

PCB Layout Thermal Design Guide

Thermal Design

Basics of Thermal Resistance and Heat Dissipation

Thermal Design

Gate-Source Voltage Surge Suppression Methods

Schematic Design & Verification

Calculation of Power Dissipation in Switching Circuit

Schematic Design & Verification

5kW High-Efficiency Fan-less Inverter

Schematic Design & Verification

New SPICE Models with Improved Simulation Speed for Power Semiconductors Are Released!

White Paper

Package Dimensions

Package Information

How to Suppress the Parallel Drive Oscillation in SiC Modules

Application Note

Snubber circuit design methods for SiC MOSFET

Schematic Design & Verification

The Problem with Traditional Vaccine Storage Freezers and How ROHM Cutting-edge Power Solutions Can Take them to the Next Level

White Paper

SiC MOSFET Layout Design Considerations

Technical Article

How to Use LTspice&reg; Models

Schematic Design & Verification

Compliance of the ELV directive

Environmental Data

Measurement Method and Usage of Thermal Resistance RthJC

Thermal Design

How to measure the oscillation occurs between parallel-connected devices

Technical Article

Two-Resistor Model for Thermal Simulation

Thermal Design

How to Use PLECS Models

Technical Article

θ<sub>JA</sub> and Ψ<sub>JT</sub>

Thermal Design

Oscillation countermeasures for MOSFETs in parallel

Schematic Design & Verification

About Export Administration Regulations (EAR)

Export Information

LEADRIVE: Design, Test and System Evaluation of Silicon Carbide Power Modules and Motor Control Units

White Paper

Notes for Temperature Measurement Using Thermocouples

Thermal Design

800V Three-Phase Output LLC DC/DC Resonant Converter

Schematic Design & Verification

How to Use Thermal Models

Thermal Design

How to Use LTspice&reg; Models: Tips for Improving Convergence

Schematic Design & Verification

Best practices for the connection of Driver Source/Emitter terminals in discrete devices

Schematic Design & Verification

Precautions during gate-source voltage measurement for SiC MOSFET

Schematic Design & Verification

Precautions for Thermal Resistance of Insulation Sheet

Thermal Design

Judgment Criteria of Thermal Evaluation

Thermal Design

Anti-Whisker formation

Package Information

5kW Inverter Circuit Using 4th Generation SiC MOSFETs

Schematic Design & Verification

SCT4062KEHR Data Sheet

Data Sheet

Precautions When Measuring the Rear of the Package with a Thermocouple

Thermal Design

Impedance Characteristics of Bypass Capacitor

Schematic Design & Verification

Method for Calculating Junction Temperature from Transient Thermal Resistance Data

Thermal Design

Types and Features of Transistors

Application Note

Notes on Gate Drive Voltage Setting and Linear Mode Application of SiC MOSFET

Technical Article

Importance of Probe Calibration When Measuring Power: Deskew

Schematic Design & Verification

How to Use the Thermal Resistance and Thermal Characteristics Parameters

Thermal Design

Thermal Characterization Guidelines for ROHM's 4th Generation SiC MOSFETs

Thermal Design

Cutting-Edge Web Simulation Tool "ROHM Solution Simulator" Capable of Complete Circuit Verification of Power Devices and Driver ICs

White Paper

How to Use PSIM Models

Schematic Design & Verification

Solving the challenges of driving SiC MOSFETs with new packaging developments

White Paper