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Discrete Semiconductor Products
VS-8ETH03STRRHM3
ActiveVishay General Semiconductor - Diodes Division
DIODE GEN PURP 300V 8A TO262AA
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Discrete Semiconductor Products
VS-8ETH03STRRHM3
ActiveVishay General Semiconductor - Diodes Division
DIODE GEN PURP 300V 8A TO262AA
Deep-Dive with AI
DocumentsDatasheet
Technical Specifications
Parameters and characteristics for this part
| Specification | VS-8ETH03STRRHM3 |
|---|---|
| Current - Average Rectified (Io) | 8 A |
| Current - Reverse Leakage @ Vr | 20 µA |
| Grade | Automotive |
| Mounting Type | Through Hole |
| Operating Temperature - Junction [Max] | 175 ░C |
| Operating Temperature - Junction [Min] | -55 C |
| Package / Case | TO-262AA, TO-262-3 Long Leads, I2PAK |
| Qualification | AEC-Q101 |
| Reverse Recovery Time (trr) | 35 ns |
| Speed | 200 mA, 500 ns |
| Supplier Device Package | TO-262AA |
| Technology | Standard |
| Voltage - DC Reverse (Vr) (Max) [Max] | 300 V |
| Voltage - Forward (Vf) (Max) @ If | 1.25 V |
Pricing
Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly
| Distributor | Package | Quantity | $ | |
|---|---|---|---|---|
| Digikey | Tape & Reel (TR) | 800 | $ 0.94 | |
| 1600 | $ 0.80 | |||
| 2400 | $ 0.76 | |||
| 5600 | $ 0.73 | |||
Description
General part information
8ETH03 Series
Diode 300 V 8A Through Hole TO-262AA
Documents
Technical documentation and resources