Discrete Semiconductor Products

VS-80APS12PBF

Obsolete

DIODE GEN PURP 1.2KV 80A TO247AC

Search across all available documentation for this part.

Discrete Semiconductor Products

Obsolete

DIODE GEN PURP 1.2KV 80A TO247AC

Technical Specifications

Parameters and characteristics for this part

Specification	VS-80APS12PBF

Current - Average Rectified (Io)	80 A
Current - Reverse Leakage @ Vr	100 µA
Mounting Type	Through Hole
Operating Temperature - Junction [Max]	150 °C
Operating Temperature - Junction [Min]	-40 °C
Package / Case	TO-247-3
Speed	Standard Recovery >500ns
Speed	200 mA
Supplier Device Package	TO-247AC
Technology	Standard
Voltage - DC Reverse (Vr) (Max) [Max]	1.2 kV
Voltage - Forward (Vf) (Max) @ If	1.17 V

Part	Voltage - Forward (Vf) (Max) @ If	Mounting Type	Operating Temperature - Junction [Max]	Operating Temperature - Junction [Min]	Speed	Speed	Supplier Device Package	Package / Case	Current - Average Rectified (Io)	Voltage - DC Reverse (Vr) (Max) [Max]	Technology	Current - Reverse Leakage @ Vr
Vishay General Semiconductor - Diodes Division VS-80APS12PBF	1.17 V	Through Hole	150 °C	-40 °C	Standard Recovery >500ns	200 mA	TO-247AC	TO-247-3	80 A	1.2 kV	Standard	100 µA

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

General part information

Diode 1200 V 80A Through Hole TO-247AC

Technical documentation and resources

No documents available